Kyoungjun Choi

TL;DR: In this paper, the synthesis, transfer, and characterization methods of graphene and 2D materials and their application to flexible devices as well as comparison with other competing materials are discussed. And a review of the application of graphene in flexible electronics is presented.

TL;DR: The PSAF-transferred graphene is found to be free from residues and shows excellent charge carrier mobility as high as ∼17,700 cm(2)/V·s with less doping compared to the graphene transferred by thermal release tape (TRT) or poly(methyl methacrylate) (PMMA) as well as good uniformity over large areas.

TL;DR: The measurement of the water vapor transmission rate (WVTR) through the 6-layer 10 × 10 cm(2) large-area graphene films synthesized by chemical vapor deposition (CVD) showed that the graphene-passivated organic field-effect transistors (OFETs) exhibited excellent environmental stability as well as a prolonged lifetime even after 500 bending cycles with strain of 2.3%.

TL;DR: It is demonstrated that Raman spectroscopy can be utilized to detect a few percent decrease in the Fermi velocity (v(F))) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN).

TL;DR: The methods of controlled, simple, and reliable graphene perforation on wafer scale along with vapor-liquid polymerization allow the expansion of current 2D membrane technology to high-performance ultrafiltration and 2D material reinforced, gas-selective thin-film polymers.