Jaehoon Park

TL;DR: In this paper, the authors investigated the annealing temperature and exposure period dependence of electrical characteristics of bottom-gate/top-contact solution-processed organic thin-film transistors (TFTs) fabricated by TFTs.

TL;DR: In this article, the effect of the semiconductor layer thickness on the effective channel capacitance of metal-insulator-semiconductor (MIS) capacitors, the output currents of pentacene-based organic field-effect transistors (OFETs), and the IC layer's thickness was investigated.

TL;DR: In this article, the effects of negative gate-bias stress on the electrical characteristics of top-contact zinc-oxide (ZnO) thin-film transistors, which were fabricated by spin coating a ZnO solution onto a silicon-nitride gate dielectric layer, were studied.

TL;DR: In this paper, the air influenced electrical properties of poly(3-hexylthiophene) (P3HT) film in a transistor structure were analyzed. But the effect of air exposure on P3HT films was not considered.

TL;DR: Theoretical simulations of spatial distribution of charge carriers and recombination rate, and I-V characteristics of the bilayer organic light emitting diodes are carried out in this article, where drift-diffusion current transport, field-dependent carrier mobility, exponential trap distribution, and Langevin recombination models are included in this computer model.