We report a study of self-assembled beta-pleated sheets in B. mori silk fibroin films using thermal analysis and infrared spectroscopy. B. mori silk fibroin may stand as an exemplar of fibrous proteins containing crystalline beta-sheets. Materials were prepared from concentrated solutions (2−5 wt % fibroin in water) and then dried to achieve a less ordered state without beta-sheets. Crystallization of beta-pleated sheets was effected either by heating the films above the glass transition temperature (Tg) and holding isothermally or by exposure to methanol. The fractions of secondary structural components including random coils, alpha-helices, beta-pleated sheets, turns, and side chains were evaluated using Fourier self-deconvolution (FSD) of the infrared absorbance spectra. The silk fibroin films were studied thermally using temperature-modulated differential scanning calorimetry (TMDSC) to obtain the reversing heat capacity. The increment of the reversing heat capacity ΔCp0(Tg) at the glass transition fo...

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Determining Beta Sheet Crystallinity in Fibrous Proteins by Thermal Analysis and Infrared Spectroscopy

2.2. Interface Trapping Effects 211 3. High-k Dielectric Materials for OFETs 212 3.1. Inorganic Dielectrics 212 3.1.1. Aluminum Oxide 213 3.1.2. Tantalum Oxide 215 3.1.3. Titanium Dioxide 216 3.1.4. Hafnium Dioxide 217 3.1.5. Zirconium Dioxide 218 3.1.6. Cerium Dioxide 218 3.2. Organic Dielectrics 218 3.2.1. Polymer Dielectrics 218 3.2.2. Self-Assembled Monoand Multilayers 225 3.3. Hybrid Dielectrics 227 3.3.1. Polymeric-Nanoparticle Composites 227 3.3.2. Inorganic-Organic Bilayers 232 3.3.3. Hybrid Solid Polymer Electrolytes 235 4. Summary 235 5. Acknowledgments 236 6. References 236

High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors.

X-ray absorption and dichroism of transition metals and their compounds

Efficiency is crucial for organic light emitting diodes (OLEDs) to be energy-saving and to have a long lifetime for display and solid state lighting applications. Numerous approaches have been proposed to attain high efficiency OLEDs through the synthesis of novel organic materials, the design of light extraction structures and the design of efficiency-effective device architectures. In this report, we first summarise the efficiency records of OLED devices using fluorescent, phosphorescent, and thermally activated delay fluorescent materials. Importantly, we review all the available efficiency-effective device architectural approaches, which include using thin layer structures, low carrier injection barriers, high carrier mobility, balanced carrier injection, effective carrier confinement, effective host-to-guest energy transfer, effective recombination zone, effective exciton generation on the host, effective exciton confinement, p–i–n structures, and tandem structures. It is hoped that better device structures can therefore be devised upon suitable device engineering to achieve higher efficiency for OLED devices.

Approaches for fabricating high efficiency organic light emitting diodes

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

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Metal oxide semiconductor thin-film transistors for flexible electronics

We investigate the operational stability of bottom-gate/top-contact-structured indium-oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. Based on the thermogravimetric analysis of the In2O3 precursor solution, we utilize a thermal annealing process at 400 °C for 40 min to prepare the In2O3 films. The results of X-ray photoemission spectroscopy and field-emission scanning electron microscopy show that the electron is the majority carrier in the In2O3 semiconductor film prepared by a spin-coating method and that the film has a polycrystalline morphology with grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. When constant drain and gate voltages are applied, these TFTs in atmospheric air exhibit a more acute decay in the drain currents with time compared to that observed under vacuum. In the positive gate-bias stress experiments, a decrease in the field-effect mobility and a positive shift in the threshold voltage are invariably observed both in atmospheric air and under vacuum, but such characteristic variations are also found to be more pronounced for the atmospheric-air case. These results are explained in terms of the electron-trapping phenomenon at the grain boundaries in the In2O3 semiconductor, as well as the electrostatic interactions between electrons and polar water molecules.

Operational stability of solution-processed indium-oxide thin-film transistors: Environmental condition and electrical stress

P‐14: Electrical Characteristics of P3HT:TIPS‐Pentacene Blend Organic Thin‐Film Transistor under Light Irradiation

Poly(4-vinylphenol-co-methyl methacrylate)/titanium dioxide (TiO2) nanocomposite insulators were fabricated for application in 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs). The capacitance of the fabricated capacitors with this nanocomposite insulator increased with increasing content of the high-dielectric-constant TiO2 nanoparticles. Nonetheless, particle aggregates, which were invariably produced in the insulator at higher TiO2 contents, augmented gate-leakage currents during device operation while the rough surface of the insulator obstructed charge transport in the conducting channel of the TIPS-Pn TFTs. These results suggest a significant effect of the morphological characteristics of nanocomposite insulators on TFT performance, as well as on their dielectric properties. Herein, the optimal particle composition was determined to be approximately 1.5 wt%, which contributed to characteristic improvements in the drain current, field-effect mobility, and threshold voltage of TIPS-Pn TFTs.

Poly(4-vinylphenol-co-methyl methacrylate)/titanium dioxide nanocomposite gate insulators for 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors

We demonstrated the effect of the field dependency of charge carrier mobility on roll-off characteristic of current efficiency. Field dependent factor in Poole-Frenkel model is controlled to describe charge balance of electron and hole concentration at high field. It is well established that roll-off characteristic is dependent upon mobility match which results in charge balance in EML. We exhibited the improvement of the roll-off characteristic of current efficiency and explained how charge balance is induced through this description.

Improvement of Current Efficiency at High Field Regime Via Description of Roll-off Characteristic in Model Device of OLEDs

We demonstrate a dimethyl ketone treatment to produce a hydrophobic surface of cross-linked poly(4-vinylphenol) (c-PVP) insulators for pentacene thin-film transistors (TFTs). Through water contact angle measurements, the dimethyl ketone treatment is proven to significantly increase the surface hydrophobicity of c-PVP films. The results of X-ray diffraction analyses indicate that the dimethyl ketone-treated c-PVP insulator contributes to enhancing the crystallinity of pentacene films and reducing the density of lamellar grains and bulk phase crystallites in pentacene films. In addition, the growth of lamellar grains is elucidated by examining the initial growths of the pentacene films on the c-PVP films with different surface energies. Consequently, the enhancement in the performance of pentacene TFTs is achieved by incorporating the dimethyl ketone-treated c-PVP films as gate insulators.

Jaehoon Park

Papers

Operational stability of solution-processed indium-oxide thin-film transistors: Environmental condition and electrical stress

P‐14: Electrical Characteristics of P3HT:TIPS‐Pentacene Blend Organic Thin‐Film Transistor under Light Irradiation

Poly(4-vinylphenol-co-methyl methacrylate)/titanium dioxide nanocomposite gate insulators for 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors

Improvement of Current Efficiency at High Field Regime Via Description of Roll-off Characteristic in Model Device of OLEDs

Dimethyl Ketone Treatment of Cross-linked Poly(4-vinylphenol) Insulators for Pentacene Thin-film Transistors