D
D. Kurt Gaskill
Researcher at United States Naval Research Laboratory
Publications - 16
Citations - 577
D. Kurt Gaskill is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Graphene & Electron mobility. The author has an hindex of 8, co-authored 16 publications receiving 527 citations. Previous affiliations of D. Kurt Gaskill include Pennsylvania State University.
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Journal ArticleDOI
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Joshua D. Caldwell,Travis J. Anderson,James C. Culbertson,Glenn G. Jernigan,Karl D. Hobart,Fritz J. Kub,Marko J. Tadjer,Joseph L. Tedesco,Jennifer K. Hite,Michael A. Mastro,Rachael L. Myers-Ward,Charles R. Eddy,Paul M. Campbell,D. Kurt Gaskill +13 more
TL;DR: The dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape is demonstrated to enable EG films amenable for use in device fabrication on arbitrary substrates and films that are deemed most beneficial to carrier transport.
Journal ArticleDOI
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.
Joshua A. Robinson,Maxwell Wetherington,Joseph L. Tedesco,Paul M. Campbell,Xiaojun Weng,J.P. Stitt,M. A. Fanton,Eric Frantz,David W. Snyder,Brenda L. VanMil,Glenn G. Jernigan,Rachael L. Myers-Ward,Charles R. Eddy,D. Kurt Gaskill +13 more
TL;DR: There is a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC) and it is shown that carrier mobility depends strongly on the graphene layer stacking.
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Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition
Zachary R. Robinson,Zachary R. Robinson,Eng Wen Ong,Tyler R. Mowll,Parul Tyagi,D. Kurt Gaskill,Heike Geisler,Carl A. Ventrice +7 more
TL;DR: In this article, the growth of graphene by catalytic decomposition of ethylene in an ultrahigh-vacuum chamber on both a clean Cu(100) surface and a surface predosed with a layer of chemisorbed oxygen was studied.
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Water affinity to epitaxial graphene: the impact of layer thickness.
Cristina E. Giusca,Vishal Panchal,Martin Munz,Virginia D. Wheeler,Luke O. Nyakiti,Rachael L. Myers-Ward,D. Kurt Gaskill,Olga Kazakova +7 more
TL;DR: In this paper, the sensitivity to water vapour of one-, two-, and three-layer epitaxial graphene (1, 2, and 3LG) is examined, as measured by changes in work function and carrier density, with 1LG being the most sensitive to water adsorption and environmental concentration changes.
Journal ArticleDOI
Graphene Formation on SiC Substrates
Brenda L. VanMil,Rachael L. Myers-Ward,Joseph L. Tedesco,Charles R. Eddy,Glenn G. Jernigan,James C. Culbertson,Paul M. Campbell,J.M. McCrate,S.A. Kitt,D. Kurt Gaskill +9 more
TL;DR: Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates as discussed by the authors.