Microcavity physics and design will be reviewed. Following an overview of applications in quantum optics, communications and biosensing, recent advances in ultra-high-Q research will be presented.

Optical microcavities

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

Micrometre-scale silicon electro-optic modulator

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

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Silicon microring resonators

The term 'photonics' describes a technology whereby data transmission and processing occurs largely or entirely by means of photons. Photonic crystals are microstructured materials in which the dielectric constant is periodically modulated on a length scale comparable to the desired wavelength of operation. Multiple interference between waves scattered from each unit cell of the structure may open a 'photonic bandgap'--a range of frequencies, analogous to the electronic bandgap of a semiconductor, within which no propagating electromagnetic modes exist. Numerous device principles that exploit this property have been identified. Considerable progress has now been made in constructing two-dimensional structures using conventional lithography, but the fabrication of three-dimensional photonic crystal structures for the visible spectrum remains a considerable challenge. Here we describe a technique--three-dimensional holographic lithography--that is well suited to the production of three-dimensional structures with sub-micrometre periodicity. With this technique we have made microperiodic polymeric structures, and we have used these as templates to create complementary structures with higher refractive-index contrast.

Fabrication of photonic crystals for the visible spectrum by holographic lithography

Microring resonators side coupled to signal waveguides provide compact, narrow band, and large free spectral range optical channel dropping filters. Higher order filters with improved passband characteristics and larger out-of-band signal rejection are realized through the coupling of multiple rings. The analysis of these devices is approached by the novel method of coupling of modes in time. The response of filters comprised of an arbitrarily large dumber of resonators may be written down by inspection, as a continued fraction. This approach simplifies both the analysis and filter synthesis aspects of these devices.

Microring resonator channel dropping filters

Confinement of light to small volumes has important implications for optical emission properties: it changes the probability of spontaneous emission from atoms, allowing both enhancement and inhibition. In photonic-bandgap (PBG) materials1,2,3,4 (also known as photonic crystals), light can be confined within a volume of the order of (λ/2n)3, where λ is the emission wavelength and n the refractive index of the material, by scattering from a periodic array of scattering centres. Until recently5,6, the properties of two- and three-dimensional PBG structures have been measured only at microwave frequencies. Because the optical bandgap scales with the period of the scattering centres, feature sizes of around 100 nm are needed for manipulation of light at the infrared wavelength (1.54 µm) used for optical communications. Fabricating features this small requires the use of electron-beam or X-ray lithography. Here we report measurements of microcavity resonances in PBG structures integrated directly into a sub-micrometre-scale silicon waveguide. The microcavity has a resonance at a wavelength of 1.56 µm, a quality factor of 265 and a modal volume of 0.055 µm3. This level of integration might lead to new photonic chip architectures and devices, such as zero-threshold microlasers, filters and signal routers.

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Photonic-bandgap microcavities in optical waveguides

Compact optical channel dropping filters incorporating side-coupled ring resonators as small as 3 /spl mu/m in radius are realized in silicon technology. Quality factors up to 250, and a free-spectral range (FSR) as large as 24 nm are measured. Such structures can be used as fundamental building blocks in more sophisticated optical signal processing devices.

Ultra-compact Si-SiO 2 microring resonator optical channel dropping filters

In this letter, we experimentally evaluate the effect of miniaturization and surface roughness on transmission losses within a Si/SiO2 waveguide system, and explain the results using a theoretical model. Micrometer/nanometer-sized waveguides are imperative for its potential use in dense integrated optics and optical interconnection for silicon integrated circuits. A theoretical model was employed to predict the relationship between the transmission losses of the dielectric silicon waveguide and its width. This model accurately predicts that loss increases as waveguide width decreases. Furthermore, we show that a major source of loss comes from sidewall roughness. We have constructed a complete contour map showing the interdependence of sidewall roughness and transmission loss, to assist users in their design of an optimal waveguide fabrication process that minimizes loss. Additionally, users can find an effective path to reduce the scattering loss from sidewall roughness. Using this map, we confirm that n...

Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model

We report measurements on the nature of aluminum and gold contacts to GaN. The GaN films were deposited onto the R‐plane of sapphire substrates by molecular beam epitaxy and are autodoped n‐type. Metal contacts were deposited by evaporation and were patterned photolithographically. Current‐voltage characterization shows that the as‐deposited aluminum contacts are ohmic while the as‐deposited gold contacts are rectifying. The gold contacts become ohmic after annealing at 575 °C, a result attributed to gold diffusion. The specific contact resistivity of the ohmic aluminum and gold contacts were found by transfer length measurements to be of device quality (10−7–10−8 Ω m2). The results of these studies suggest a direct correlation between barrier height and work function of the metal, consistent with the strong ionic character of GaN.

James Foresi

Papers

Microring resonator channel dropping filters

Photonic-bandgap microcavities in optical waveguides

Ultra-compact Si-SiO 2 microring resonator optical channel dropping filters

Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model

Metal contacts to gallium nitride