An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Starting with a brief review on 0.1-/spl mu/m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling.

CMOS scaling into the nanometer regime

An apparatus may include a semiconductor chip and a fluidics assembly. The semiconductor chip has an array of wells and an array of sensors and each sensor of the array of sensors is in fluid communication with a well of the array of wells. The fluidics assembly is located on top of the semiconductor chip and is configured to deliver fluids to the semiconductor chip. The fluidics assembly includes a flow expansion chamber configured to introduce the fluids, an outlet portion configured to pipe out the fluids, and a flow chamber portion. The flow chamber portion is configured to allow the fluids to flow from the flow expansion chamber to the outlet portion and to allow the fluids to interact along the way with material in the array of wells. The flow expansion chamber has a curved wall at the top or bottom so that the height of the flow expansion chamber at the center is less than at the walls that restrict the fluids to the left and right.

Methods and apparatus for measuring analytes using large scale fet arrays

The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices...

Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.

Medical device applications of nanostructured surfaces

Trap creation in both the bulk of silicon dioxide films and at its interfaces with silicon and metallic contacting electrodes is shown to depend on the presence of hot electrons in the oxide. For thick oxides (≥100 A), little trap creation is observed in the near‐thermal transport regime at electric field magnitudes less than 1.5 MV/cm. At these low fields, electrons travel in a streaming fashion close to the bottom of the oxide conduction band at energies less than that of the dominant optical phonon mode at 0.153 eV. At higher electric fields, the rate of bulk trap creation is proportional to the average energy of the hot electrons, which move in a dispersive manner and can reach energies as large as 4 eV. For thin oxides (<100 A) where electrons can travel ballistically (i.e., without scattering), traps are not produced unless injected electrons acquire more than 2 eV of kinetic energy from the applied electric field, regardless of the magnitude of this field. All data on both thin and thick oxides are shown to give a threshold for trap creation of about 2.3 eV by the hot electrons in the oxide conduction band. Also, trap creation is shown to be suppressed by lowering the lattice temperature below ≊150 K. Our results are discussed in terms of a model involving hydrogen‐related‐species release from defect sites near the anode by the hot electrons and the subsequent motion of these molecules to regions near the cathode where they can interact with the lattice and form the trapping sites which are measured.

Trap creation in silicon dioxide produced by hot electrons

A sensor device and method for detecting the presence of an analyte in a fluid solution are disclosed. The sensor device system can comprise a substrate and an array of free-standing nanowires attached to the substrate. The array can include individual free-standing nanowires wherein each of the individual free-standing nanowires have a first end and a second end. The first end can, in some embodiments, be attached to the substrate and the second end unattached to the substrate. Such individual free-standing nanowires are configured for electrical communication with other individual free-standing nanowires through the first end. A signal measurement apparatus can be electrically coupled to the array of free-standing nanowires for receiving electrical information from the array of free-standing nanowires.

Free-standing nanowire sensor and method for detecting an analyte in a fluid

A memory device includes a semiconducting polymer film, which includes an organic dopant The semiconducting polymer film has a first side and a second side The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other Further, an electrical charge is localized on the organic dopant

Memory device having a semiconducting polymer film

Electron transport in thin (3.8--5.8-nm) silicon dioxide films has been investigated with use of the carrier-separation and vacuum-emission techniques. For the thinner films and smaller voltages, ballistic transport is inferred not only indirectly from the oscillations of the current-voltage characteristics (as originally reported by Lewicki and Maserjian) but also directly from the average energy measured via the carrier-separation technique and from the observation of the ballistic peak (about 0.15 eV wide) in the vacuum-emission experiments. In thicker films and/or at higher bias voltages, the transition from the ballistic to the steady-state regime is observed. Phonon replicas for the 0.153- and 0.063-eV longitudinal optical phonons have been observed in this transient situation. The experimental results have been compared to Monte Carlo simulations. Best agreement has been obtained by using a value of 0.7${m}_{0}$ for the polaron mass. The average mean free path of about 1 nm resulting from the simulation is in good agreement with Lewicki and Maserjian's experimental data.

Ballistic electron transport in thin silicon dioxide films.

A superconductor-insulator-superconductor (SIS) mixer with a broadband integrated tuning structure is described. The mixer is tunable from 85 to 116 GHz and at 114 GHz has a noise temperature >

James Stasiak

Papers

Trap creation in silicon dioxide produced by hot electrons

Free-standing nanowire sensor and method for detecting an analyte in a fluid

Memory device having a semiconducting polymer film

Ballistic electron transport in thin silicon dioxide films.

An 85-116 GHz SIS receiver using inductively shunted edge junctions