Showing papers by "Jason R. Petta published in 2014"

Photon emission from a cavity-coupled double quantum dot.

Abstract: Driving a direct current through a double quantum dot in a semiconducting nanowire coupled to an optical cavity results in the emission of photons.

Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

Abstract: We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te6 and (110)Bi2Te3||(100)Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.

Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

Abstract: We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to (100) of Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.

Extreme harmonic generation in electrically driven spin resonance.

Abstract: We report the observation of multiple harmonic generation in electric dipole spin resonance in an InAs nanowire double quantum dot. The harmonics display a remarkable detuning dependence: near the interdot charge transition as many as eight harmonics are observed, while at large detunings we only observe the fundamental spin resonance condition. The detuning dependence indicates that the observed harmonics may be due to Landau-Zener transition dynamics at anticrossings in the energy level spectrum.

Highly tunable formation of nitrogen-vacancy centers via ion implantation

Abstract: We demonstrate highly tunable formation of nitrogen-vacancy (NV) centers using 20 keV 15N+ ion implantation through arrays of high-resolution apertures fabricated with electron beam lithography. By varying the aperture diameters from 80 to 240 nm, as well as the average ion fluences from 5×1010 to 2 × 1011 ions/cm2, we can control the number of ions per aperture. We analyze the photoluminescence on multiple sites with different implantation parameters and obtain ion-to-NV conversion yields of 6%–7%, consistent across all ion fluences. The implanted NV centers have spin dephasing times T2* ∼ 3 μs, comparable to naturally occurring NV centers in high purity diamond with natural abundance 13C. With this technique, we can deterministically control the population distribution of NV centers in each aperture, allowing for the study of single or coupled NV centers and their integration into photonic structures.

Fast room-temperature phase gate on a single nuclear spin in diamond.

Abstract: Nuclear spins support long lived quantum coherence due to weak coupling to the environment, but are difficult to rapidly control using nuclear magnetic resonance as a result of the small nuclear magnetic moment. We demonstrate a fast $\ensuremath{\sim}500\text{ }\text{ }\mathrm{ns}$ nuclear spin phase gate on a $^{14}\mathrm{N}$ nuclear spin qubit intrinsic to a nitrogen-vacancy center in diamond. The phase gate is enabled by the hyperfine interaction and off-resonance driving of electron spin transitions. Repeated applications of the phase gate bang-bang decouple the nuclear spin from the environment, locking the spin state for up to $\ensuremath{\sim}140\text{ }\text{ }\ensuremath{\mu}\mathrm{s}$.

MOCVD synthesis of compositionally tuned topological insulator nanowires

Abstract: Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana Fermions.

Highly-tunable formation of nitrogen-vacancy centers via ion implantation

Abstract: We demonstrate highly-tunable formation of nitrogen-vacancy (NV) centers using 20 keV 15N+ ion implantation through arrays of high-resolution apertures fabricated with electron beam lithography. By varying the aperture diameters from 80 to 240 nm, as well as the average ion fluences from 5 x 10^10 to 2 x 10^11 ions/cm^2, we can control the number of ions per aperture. We analyze the photoluminescence on multiple sites with different implantation parameters and obtain ion-to-NV conversion yields of 6 to 7%, consistent across all ion fluences. The implanted NV centers have spin dephasing times T2* ~ 3 microseconds, comparable to naturally occurring NV centers in high purity diamond with natural abundance 13C. With this technique, we can deterministically control the population distribution of NV centers in each aperture, allowing for the study of single or coupled NV centers and their integration into photonic structures.

Polarized Temperature Dependent Raman Study of Bi2Te3-Cr2Ge2Te6 heterostructure and the Ferromagnetic Insulator Cr2Ge2Te6

Abstract: Cr2Ge2Te6 has been of interest for decades, as it is one of only a few ferromagnetic insulators. Recently, this material has been revisited due to its potential as a substrate for Bi2Te3, a topological insulator. This enables the possibility of studying the anomalous quantum Hall effect in topological insulators, and a route to novel spintronic devices. To probe the compatibility of these two materials, we use polarized variable temperature Raman microscopy to study Bi2Te3-Cr2Ge2Te6 heterostructure as well as the phonon dynamics of Cr2Ge2Te6. We found the temperature dependence of the Cr2Ge2Te6 phonons results primarily from anharmonicity, though a small magneto-elastic coupling is also observed. Our results confirm the potential of Cr2Ge2Te6 as a substrate for topological insulators.