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The unprecedented ability of nanometallic (that is, plasmonic) structures to concentrate light into deep-subwavelength volumes has propelled their use in a vast array of nanophotonics technologies and research endeavours. Plasmonic light concentrators can elegantly interface diffraction-limited dielectric optical components with nanophotonic structures. Passive and active plasmonic devices provide new pathways to generate, guide, modulate and detect light with structures that are similar in size to state-of-the-art electronic devices. With the ability to produce highly confined optical fields, the conventional rules for light-matter interactions need to be re-examined, and researchers are venturing into new regimes of optical physics. In this review we will discuss the basic concepts behind plasmonics-enabled light concentration and manipulation, make an attempt to capture the wide range of activities and excitement in this area, and speculate on possible future directions.

/pdf/plasmonics-for-extreme-light-concentration-and-manipulation-25m55spiva.pdf

Plasmonics for extreme light concentration and manipulation.

Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

/pdf/silicon-optical-modulators-578o7o6kvr.pdf

Silicon optical modulators

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

/pdf/silicon-microring-resonators-3fzr4lpxbh.pdf

Silicon microring resonators

Artificial Neural Networks have dramatically improved performance for many machine learning tasks. We demonstrate a new architecture for a fully optical neural network that enables a computational speed enhancement of at least two orders of magnitude and three orders of magnitude in power efficiency over state-of-the-art electronics.

Deep learning with coherent nanophotonic circuits

Linear photonic crystal microcavities are demonstrated in 45 nm SOI CMOS with no process changes in foundry. Side-coupled waveguide excitation decouples cavity and coupling design. A loss Q on the order of 100,000 is demonstrated.

Linear Photonic Crystal Microcavities in Zero-Change SOI CMOS

A system for optical transduction of quantum information includes a qubit chip including a plurality of data qubits configured to operate at microwave frequencies, and a transduction chip spaced apart from the qubit chip, the transduction chip including a microwave-to-optical frequency transducer. The system includes an interposer coupled to the qubit chip and the transduction chip, the interposer including a dielectric material including a plurality of superconducting microwave waveguides formed therein. The plurality of superconducting microwave waveguides is configured to transmit quantum information from the plurality of data qubits to the microwave-to-optical frequency transducer on the transduction chip, and the microwave-to-optical frequency transducer is configured to transduce the quantum information from the microwave frequencies to optical frequencies.

Superconducting interposer for optical transduction of quantum information

A photoreceiver device includes a light detector connected between a power supply node and a first node, and first to third switching elements The light detector is configured to detect an incident optical data signal, and to output photocurrent corresponding to a magnitude of the optical data signal through the first node The first switching element is connected between the first node and a ground node The second switching element is connected between the power supply node and a second node The third switching element is connected between the second node and the ground node The third switching element has a control node connected to the first node

Self-clocked low noise photoreceiver (sclnp)

We demonstrate the first depletion-mode modulators in polysilicon bulk CMOS. They use a new, wiggler-mode microcavity for process compatibility with fully-etched silicon and lateral pn junctions. We show 4.2dB extinction and 60fJ energy/bit at 5Gbps.

http://plab.colorado.edu/pubs_pdfs/c72.pdf

Jason S. Orcutt

Papers

Linear Photonic Crystal Microcavities in Zero-Change SOI CMOS

Superconducting interposer for optical transduction of quantum information

Self-clocked low noise photoreceiver (sclnp)

Depletion-mode polysilicon optical modulators in a bulk CMOS process

Effects of qubit frequency crowding on scalable quantum processors