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The unprecedented ability of nanometallic (that is, plasmonic) structures to concentrate light into deep-subwavelength volumes has propelled their use in a vast array of nanophotonics technologies and research endeavours. Plasmonic light concentrators can elegantly interface diffraction-limited dielectric optical components with nanophotonic structures. Passive and active plasmonic devices provide new pathways to generate, guide, modulate and detect light with structures that are similar in size to state-of-the-art electronic devices. With the ability to produce highly confined optical fields, the conventional rules for light-matter interactions need to be re-examined, and researchers are venturing into new regimes of optical physics. In this review we will discuss the basic concepts behind plasmonics-enabled light concentration and manipulation, make an attempt to capture the wide range of activities and excitement in this area, and speculate on possible future directions.

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Plasmonics for extreme light concentration and manipulation.

Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

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Silicon optical modulators

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

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Silicon microring resonators

Artificial Neural Networks have dramatically improved performance for many machine learning tasks. We demonstrate a new architecture for a fully optical neural network that enables a computational speed enhancement of at least two orders of magnitude and three orders of magnitude in power efficiency over state-of-the-art electronics.

Deep learning with coherent nanophotonic circuits

Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.

Silicon photonics and challenges for fabrication

We present comprehensive characterization of silicon photonic sensors for methane leak detection. Sensitivity of 40 ppmv after 1 second integration is reported. Fourier domain characterization of on-chip etalon drifts is used for further sensor improvement.

Fiber-pigtailed silicon photonic sensors for methane leak detection

We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a standard microelectronics design flow meeting process design rules, and fabricated alongside transistors native to the process. We demonstrate both 1520nm wavelength and 1180nm cavity designs using different cavity implementations due to design rule constraints. For the 1520nm and 1180nm designs, loaded quality factors of 2,000 and 4,000 are measured, and intrinsic quality factors of 100,000 and 60,000 are extracted. We also demonstrate an evanescent coupling geometry which decouples the cavity and waveguide-coupling design.

Photonic Crystal Microcavities in a Microelectronics 45nm SOI CMOS Technology

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Building many-core processor-to-dram networks

This chapter introduces optical interconnects as a possible solution to the emerging performance wall in high-density supercomputer applications, arising from limited bandwidth and density of on-chip interconnects and chip-to-chip (processor-to-memory) electrical interfaces. The chapter focuses on the translation of system and link level performance metrics to photonic component requirements. The topics to be developed include the network topology, photonic link components, circuit and system design for photonic links.

Jason S. Orcutt

Papers

Silicon photonics and challenges for fabrication

Fiber-pigtailed silicon photonic sensors for methane leak detection

Photonic Crystal Microcavities in a Microelectronics 45nm SOI CMOS Technology

Building many-core processor-to-dram networks

CMOS Photonics for High Performance Interconnects