scispace - formally typeset
J

Jean-Marc Triscone

Researcher at University of Geneva

Publications -  318
Citations -  22530

Jean-Marc Triscone is an academic researcher from University of Geneva. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 64, co-authored 303 publications receiving 20236 citations. Previous affiliations of Jean-Marc Triscone include Rutgers University & Yale University.

Papers
More filters
Journal ArticleDOI

Positive Effect of an Internal Depolarization Field in Ultrathin Epitaxial Ferroelectric Films

TL;DR: In this article, the effect of intentionally introducing a large depolarization field in (001)-oriented, epitaxial Pb(Zr0.8)O3 (PZT) ultrathin films grown on La0.67Sr 0.33MnO3 buffered SrTiO3 substrates is investigated.
Journal ArticleDOI

A spin-orbit playground: surfaces and interfaces of transition metal oxides.

TL;DR: This review presents the current status of the research on the spin-orbit coupling in transition metal oxides, discussing the case of two semiconducting compounds and the properties of surface and interfaces based on these, and the investigation of topological effects predicted to occur in different complex oxides.
Journal ArticleDOI

Optical spectroscopy and the nature of the insulating state of rare-earth nickelates

TL;DR: In this article, a combination of spectroscopic ellipsometry and DC transport measurements was used to determine the temperature dependence of the optical conductivity of NdNiO and SmNiO films.
Journal ArticleDOI

Length-scales of interfacial coupling between metal-insulator phases in oxides

TL;DR: It is demonstrated that the length scale of the interfacial coupling between metal and insulator phases is determined by balancing the energy cost of the boundary between a metal and an insulator and the bulk phase energies.
Journal ArticleDOI

Seebeck effect in the conducting LaAlO 3 /SrTiO 3 interface

TL;DR: In this paper, the authors measured electrical transport (Seebeck effect, Hall effect, and conductivity) in LaAlO/SrTiOµ interfaces and, for comparison, in a doped SrTiµµ bulk single crystal, using the field effect in a back-gate geometry.