J
Jean Pinson
Researcher at University of Paris
Publications - 216
Citations - 12620
Jean Pinson is an academic researcher from University of Paris. The author has contributed to research in topics: Aryl & Nucleophilic substitution. The author has an hindex of 50, co-authored 211 publications receiving 11538 citations. Previous affiliations of Jean Pinson include University of Évry Val d'Essonne & Paris Diderot University.
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Journal ArticleDOI
Attachment of organic layers to conductive or semiconductive surfaces by reduction of diazonium salts
Jean Pinson,Fetah I. Podvorica +1 more
TL;DR: Surface chemistry is the topic of this tutorial review and the electrochemical reduction of aryl diazonium salts on carbon, silicon or metals which leads to the formation of an aromatic organic layer covalently bonded to the surface.
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Covalent Modification of Carbon Surfaces by Aryl Radicals Generated from the Electrochemical Reduction of Diazonium Salts
Philippe Allongue,Michel Delamar,Bernard Desbat,Olivier Fagebaume,Rachid Hitmi,Jean Pinson,Jean-Michel Saveant +6 more
TL;DR: In this paper, the authors used cyclic voltammetry, X-ray photoelectron spectroscopy, polarization modulation IR reflection absorption spectrograms, Auger spectrographic analysis, and Rutherford backscattering spectrographs to estimate the surface coverage of carbon-epoxy composites.
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Covalent Modification of Carbon Surfaces by Grafting of Functionalized Aryl Radicals Produced from Electrochemical Reduction of Diazonium Salts
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Electrografting: a powerful method for surface modification
Daniel Bélanger,Jean Pinson +1 more
TL;DR: This critical review describes the methods that are used for electrografting, their mechanism, the formation and growth of the layers as well as their applications.
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Electrochemical Formation of Close-Packed Phenyl Layers on Si(111)
TL;DR: In this article, 4-NO2 and 4-Br benzenediazonium salts have been reduced on H-terminated Si(111) electrodes, showing that organic films are monolayer thick and that covalent ≡SiAr bonding occurs, with no oxide at the interface.