P
Philippe Allongue
Researcher at École Polytechnique
Publications - 142
Citations - 5982
Philippe Allongue is an academic researcher from École Polytechnique. The author has contributed to research in topics: Silicon & Monolayer. The author has an hindex of 35, co-authored 139 publications receiving 5680 citations. Previous affiliations of Philippe Allongue include Spanish National Research Council & Fritz Haber Institute of the Max Planck Society.
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Journal ArticleDOI
Covalent Modification of Carbon Surfaces by Aryl Radicals Generated from the Electrochemical Reduction of Diazonium Salts
Philippe Allongue,Michel Delamar,Bernard Desbat,Olivier Fagebaume,Rachid Hitmi,Jean Pinson,Jean-Michel Saveant +6 more
TL;DR: In this paper, the authors used cyclic voltammetry, X-ray photoelectron spectroscopy, polarization modulation IR reflection absorption spectrograms, Auger spectrographic analysis, and Rutherford backscattering spectrographs to estimate the surface coverage of carbon-epoxy composites.
Journal ArticleDOI
Semiquantitative Study of the EDC/NHS Activation of Acid Terminal Groups at Modified Porous Silicon Surfaces
S. Sam,Larbi Touahir,J. Salvador Andresa,Philippe Allongue,J.-N. Chazalviel,Anne Chantal Gouget-Laemmel,C. Henry de Villeneuve,Anne Moraillon,François Ozanam,Noureddine Gabouze,S. Djebbar +10 more
TL;DR: This work rationalizes the different reaction paths and optimize the reaction conditions to obtain as pure as possible succinimidyl ester-terminated surfaces and maps the surface composition after activation was constructed by systematically varying the solution composition.
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Electrochemical Formation of Close-Packed Phenyl Layers on Si(111)
TL;DR: In this article, 4-NO2 and 4-Br benzenediazonium salts have been reduced on H-terminated Si(111) electrodes, showing that organic films are monolayer thick and that covalent ≡SiAr bonding occurs, with no oxide at the interface.
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Etching of Silicon in NaOH Solutions II . Electrochemical Studies of n‐Si(111) and (100) and Mechanism of the Dissolution
TL;DR: In this paper, the bias dependence of the etching of silicon (111) has been investigated by means of in situscanning tunneling microscopy observations, and currentvoltage curves and etch rate results derived from the loss of material and performed with n-type Si samples of various orientations, show that electrochemical and chemical reactions coexist in the oxidation of Si.
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Etching of Silicon in NaOH Solutions I . In Situ Scanning Tunneling Microscopic Investigation of n‐Si(111)
TL;DR: In this paper, the etching of n-type silicon (111) has been investigated by means of in situ scanning tunneling microscopy (STM) observations performed over a wide range of bias of the sample.