J
Jeong-Hoon Oh
Researcher at Samsung
Publications - 38
Citations - 305
Jeong-Hoon Oh is an academic researcher from Samsung. The author has contributed to research in topics: Resistive random-access memory & Resistive touchscreen. The author has an hindex of 6, co-authored 33 publications receiving 290 citations. Previous affiliations of Jeong-Hoon Oh include Seoul National University.
Papers
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Journal ArticleDOI
Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray
Yoon Kim,Jang-Gn Yun,Se Hwan Park,Wandong Kim,Joo Yun Seo,Myounggon Kang,Kyung-Chang Ryoo,Jeong-Hoon Oh,Jong-Ho Lee,Hyungcheol Shin,Byung-Gook Park +10 more
TL;DR: Various critical issues related with 3-D stacked nand Flash memory are examined in this paper and for the first time the structure and operation methods of the “full” array are considered.
Patent
Semiconductor devices and methods of driving the same
TL;DR: In this paper, a semiconductor device using resistive memory material layers and a method of driving the semiconductor devices is described, where at least one memory cell includes a uni-polar variable resistor and a bi polar variable resistor connected in series and configured to switch between low resistance states and high resistance states.
Patent
Method of processing a defect source at a wafer edge region in a semiconductor manufacturing
TL;DR: In this article, the authors proposed a method of eliminating or covering a defect source in a wafer edge region for semiconductor fabrication using a photoresist pattern exposing the defect source.
Journal ArticleDOI
Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics
Kyung-Chang Ryoo,Kyung-Chang Ryoo,Jeong-Hoon Oh,Jeong-Hoon Oh,Sunghun Jung,Hongsik Jeong,Byung-Gook Park +6 more
TL;DR: In this paper, a U-shape resistive cell structure was proposed for low power RRAM with forming-less process, which is the best fit for generating low power resistive random access memory (RRAM) without forming state.
Patent
Semiconductor devices having channels with retrograde doping profile
TL;DR: In this paper, a device isolation region is formed, delimiting an active region in a substrate and a bit line is formed crossing the word line on the substrate, the channel having a retrograde doping profile having a doping concentration that increases away from a top surface of the active region.