Showing papers by "Jérémie Grisolia published in 2002"
TL;DR: In this paper, a study of silicon implanted with 1.55 MeV helium 3 and thermally annealed to generate a subsurface cavity region was performed using neutron depth profiling and transmission electron microscopy (TEM).
Abstract: A study of silicon implanted with 1.55 MeV helium 3 and thermally annealed to generate a subsurface cavity region was performed using neutron depth profiling and transmission electron microscopy (TEM). Results show that about 30% of the initial implanted helium is still present in cavities even after a 900 °C-1 h anneal. In addition, TEM measurement of cavity size on anneal temperature yields an activation energy of 1.65 eV for the growth of cavities. This value is very close to the activation energy (1.7 eV) reported for helium diffusion in silicon. Cavity growth hence results essentially from exchange of helium atoms between cavities.
23 citations
01 Jan 2002-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, a non-uniform layer of cavities with a distribution where bigger cavities are surrounded by smaller ones was found, and the role of dislocations seem to be important in that distribution.
Abstract: Cavities were created by MeV He implantation in silicon through a 1.5 μm Al foil. After a 800 °C-annealing, unexpected growth mechanism was found: a non-uniform layer of cavities with a distribution where bigger cavities are surrounded by smaller ones. Neither Oswald ripening nor migration-coalescence mechanisms can be applied to describe the growth of these cavities. The role of dislocations seem to be important in that distribution. Indeed some cavities seem to be trapped by dislocations. However the motion of the helium does not appear to be the origin of that anormal growth mechanism.
12 citations