J
Jérémie Grisolia
Researcher at University of Toulouse
Publications - 69
Citations - 1314
Jérémie Grisolia is an academic researcher from University of Toulouse. The author has contributed to research in topics: Ion implantation & Silicon. The author has an hindex of 17, co-authored 67 publications receiving 1241 citations. Previous affiliations of Jérémie Grisolia include Intelligence and National Security Alliance & Institut national des sciences appliquées.
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Journal ArticleDOI
99 % random telegraph signal-like noise in gold nanoparticle μ-stripes
Jérémie Grisolia,B. Viallet,Catherine Amiens,S. Baster,A.S. Cordan,Y. Leroy,C. Soldano,Jürgen Brugger,Laurence Ressier +8 more
TL;DR: I(V) and I(t) measurements reveal current fluctuations that were interpreted in terms of charging and discharging of nanoparticle islands leading to a very large electrostatic perturbation of current conduction paths.
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KFM detection of charges injected by AFM into a thin SiO2 layer containing Si nanocrystals
C. Dumas,Laurence Ressier,Jérémie Grisolia,Arnaud Arbouet,Vincent Paillard,Gérard Benassayag,S. Schamm,Pascal Normand +7 more
TL;DR: In this article, a charge retention of Si nanocrystals elaborated by ultra-low energy ion implantation and thermal annealings into a thin SiO"2 layer is characterized by atomic force microscopy (AFM) and KFM.
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A transparent flexible z-axis sensitive multi-touch panel based on colloidal ITO nanocrystals.
Neralagatta M. Sangeetha,M. Gauvin,N. Decorde,Fabien Delpech,Pier-Francesco Fazzini,B. Viallet,Guillaume Viau,Jérémie Grisolia,Laurence Ressier +8 more
TL;DR: A highly transparent, flexible touch panel based on a matrix of strain gauges derived from the least resistive film of 17 nm butanoate ITO NCs sensitively detects the lateral position (x, y) of the touch as well as its intensity over the z-axis, enabling navigation capabilities over all three axes, a feature highly desired by the display industry.
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Fabrication of planar cobalt electrodes separated by a sub-10 nm gap using high resolution electron beam lithography with negative PMMA
TL;DR: This complete study proves that PMMA can be used as a HREBL negative resist to fabricate nanoelectrodes separated by a controlled and reproducible gap ranging from 5nm to several tens of nanometers.
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Structured ZnO-based contacts deposited by non-reactive rf magnetron sputtering on ultra-thin SiO2/Si through a stencil mask
Antoine Barnabé,Maëva Lalanne,Lionel Presmanes,Jia Mei Soon,Philippe Tailhades,C. Dumas,Jérémie Grisolia,Arnaud Arbouet,Vincent Paillard,Gérard Benassayag,M. A. F. van den Boogaart,Veronica Savu,Jürgen Brugger,Pascal Normand +13 more
TL;DR: In this article, the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized by ultra-low energy ion implantation followed by thermal annealing.