Jerry R. Meyer

TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.

TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.

TL;DR: In this paper, an improved mid-wave infrared diode laser structure based on InAs•Ga1−xInxSb• InAs−Ga•Sb Type•II multiple quantum wells was proposed, which combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate and excellent electrical and optical confinement.

TL;DR: In this paper, the Auger recombination lifetime in InAs-Ga1−xInxSb superlattices was investigated by analyzing the steadystate photoconductive response to frequency-doubled CO2 radiation, at intensities varying by over four orders of magnitude.

TL;DR: Simulations demonstrate that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells, and confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices.