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Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
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In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.Abstract:
We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...read more
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First-principles calculations for defects and impurities: Applications to III-nitrides
TL;DR: In this paper, the authors describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors and pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels.
Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
Strain-induced polarization in wurtzite III-nitride semipolar layers
TL;DR: Chakraborty et al. as discussed by the authors presented growth orientation dependence of the piezoelectric polarization of InxGa1−xN and AlyGa 1−yN layers matched to GaN and showed that the zero crossover has only a very small dependence on the In or Al content of the ternary alloy layer.
Journal ArticleDOI
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
TL;DR: Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated and the growths of linearly-shaped staggered In GaN QWs by employing graded growth temperature grading are presented.
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Large In-Plane and Vertical Piezoelectricity in Janus Transition Metal Dichalchogenides
TL;DR: The study reveals the potential for utilizing piezoelectric 2D materials and their van der Waals multilayer structures in device applications.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Book
The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.