With the fast development of the fifth-generation cellular network technology (5G), the future sensors and microelectromechanical systems (MEMS)/nanoelectromechanical systems (NEMS) are presenting a more and more critical role to provide information in our daily life. This review paper introduces the development trends and perspectives of the future sensors and MEMS/NEMS. Starting from the issues of the MEMS fabrication, we introduced typical MEMS sensors for their applications in the Internet of Things (IoTs), such as MEMS physical sensor, MEMS acoustic sensor, and MEMS gas sensor. Toward the trends in intelligence and less power consumption, MEMS components including MEMS/NEMS switch, piezoelectric micromachined ultrasonic transducer (PMUT), and MEMS energy harvesting were investigated to assist the future sensors, such as event-based or almost zero-power. Furthermore, MEMS rigid substrate toward NEMS flexible-based for flexibility and interface was discussed as another important development trend for next-generation wearable or multi-functional sensors. Around the issues about the big data and human-machine realization for human beings’ manipulation, artificial intelligence (AI) and virtual reality (VR) technologies were finally realized using sensor nodes and its wave identification as future trends for various scenarios.

Development Trends and Perspectives of Future Sensors and MEMS/NEMS.

Energy harvesting is the most effective way to respond to the energy shortage and to produce sustainable power sources from the surrounding environment. The energy harvesting technology enables scavenging electrical energy from wasted energy sources, which always exist everywhere, such as in heat, fluids, vibrations, etc. In particular, piezoelectric energy harvesting, which uses a direct energy conversion from vibrations and mechanical deformation to the electrical energy, is a promising technique to supply power sources in unattended electronic devices, wireless sensor nodes, micro-electronic devices, etc., since it has higher energy conversion efficiency and a simple structure. Up to now, various technologies, such as advanced materials, micro- and macro-mechanics, and electric circuit design, have been investigated and emerged to improve performance and conversion efficiency of the piezoelectric energy harvesters. In this paper, we focus on recent progress of piezoelectric energy harvesting technologies based on PbZrxTi1-xO3 (PZT) materials, which have the most outstanding piezoelectric properties. The advanced piezoelectric energy harvesting technologies included materials, fabrications, unique designs, and properties are introduced to understand current technical levels and suggest the future directions of piezoelectric energy harvesting.

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Recent Progress on PZT Based Piezoelectric Energy Harvesting Technologies

This paper discusses piezoelectric acoustic devices based on widely used piezoelectric materials. Commonly used piezoelectric thin film deposition techniques and the influence of process parameters on the growth, texture and orientation of the films are discussed. Etching techniques are also outlined. A comparative study of different devices developed previously is given. Also, applications of developed devices in aero-acoustic and medical fields have been briefly discussed. Flow charts of various techniques of deposition along with a combined one for full acoustic device fabrication are given. Various techniques, frequently used for thin film characterization have been discussed. The testing and measurement techniques to determine the responses of acoustic devices such as sensitivity, resonance frequency, frequency response, piezoelectric co-efficient etc. have been briefly illustrated. This paper discusses common failure modes with respect to the field of use of acoustic devices. It also concisely discusses various reliability tests done in industries to assess the quality of the developed devices. This review has also suggested directions for future development of thin film acoustic sensors.

Piezoelectric MEMS based acoustic sensors: A review

This paper describes the development of aluminum nitride (AlN) resonant accelerometers that can be integrated directly over foundry CMOS circuitry. Acceleration is measured by a change in resonant frequency of AlN double-ended tuning-fork (DETF) resonators. The DETF resonators and an attached proof mass are composed of a 1-mum-thick piezoelectric AlN layer. Utilizing piezoelectric coupling for the resonator drive and sense, DETFs at 890 kHz have been realized with quality factors (Q) of 5090 and a maximum power handling of 1 muW. The linear drive of the piezoelectric coupling reduces upconversion of 1/f amplifier noise into 1/f 3 phase noise close to the oscillator carrier. This results in lower oscillator phase noise, -96 dBc/Hz at 100-Hz offset from the carrier, and improved sensor resolution when the DETF resonators are oscillated by the readout electronics. Attached to a 110-ng proof mass, the accelerometer microsystem has a measured sensitivity of 3.4 Hz/G and a resolution of 0.9 mG/radicHz from 10 to 200 Hz, where the accelerometer bandwidth is limited by the measurement setup. Theoretical calculations predict an upper limit on the accelerometer bandwidth of 1.4 kHz.

Post-CMOS Compatible Aluminum Nitride Resonant MEMS Accelerometers.

Energy harvesting is one of the most promising research areas to produce sustainable power sources from the ambient environment. Which found applications to attain the extensive lifetime self-power...

Recent advances in flexible PVDF based piezoelectric polymer devices for energy harvesting applications

In this paper, the piezoelectric coefficient d33 of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM) measurement and finite element method (FEM) simulation. Both the sample without a top electrode and another with a top electrode were measured by PFM to characterize the piezoelectric property effectively. To obtain the numerical solution, an equivalent model of the PFM measurement system was established based on theoretical analysis. The simulation results for two samples revealed the effective measurement value d33-test should be smaller than the intrinsic value d33 due to the clamping effect of the substrate and non-ideal electric field distribution. Their influences to the measurement results were studied systematically. By comparing the experimental results with the simulation results, an experimental model linking the actual piezoelectric coefficient d33 with the measurement results d33-test was given under this testing configuration. A novel and effective approach was presented to eliminate the influences of substrate clamping and non-ideal electric field distribution and extract the actual value d33 of AlN thin films.

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Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications

https://www.mdpi.com/2072-666X/6/9/1236/pdf

Research on the Piezoelectric Properties of AlN Thin Films for

We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.

/pdf/researching-the-aluminum-nitride-etching-process-for-etnvmdszxi.pdf

Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

In this paper, we report a novel aluminum nitride (AlN) resonant micro-electromechanical systems (MEMS) accelerometer. The spring beams are T-shaped with two masses hanged at the end. This accelerometer is sensitive to the $z$ -axis acceleration due to a thin thickness. Different from the working mechanism of the ordinary MEMS resonant accelerometers, masses of this accelerometer are excited to resonate in-plane. In addition the stiffness of spring beams changes significantly when an out plane ( $z$ -axis) inertial force applied on the structure. Therefore, the resonant frequency of the structure will change with the out-plane inertial force. The resonant properties and sensitivities of this AlN accelerometer are simulated by COMSOL Multiphysics. The accelerometer is fabricated and tested. The size of the whole structure is $464\times 650\,\,\mu \text{m}^{2}$ . The resonant frequency is 16.10925 kHz at the static state. The sensing-axis sensitivity of this accelerometer is 1.11 Hz/g (i.e., 68.9 ppm/g) tested from −5g to +5g. The linearity of the accelerometer is 0.9954. The cross-axis sensitivities are 0.053 Hz/g ( $x$ -axis) and 0.048 Hz/g ( $y$ -axis) respectively. The temperature coefficient of frequency (TCF) of this accelerometer is 0.815 Hz/ °C (i.e., 50.6 ppm/°C), tested from 0 °C to 50 °C. [2019-0062]

A T-Shape Aluminum Nitride Thin-Film Piezoelectric MEMS Resonant Accelerometer

A novel three-dimensional (3D) hermetic packaging technique suitable for capacitive microelectromechanical systems (MEMS) sensors is studied. The composite substrate with through silicon via (TSV) is used as the encapsulation cap fabricated by a glass-in-silicon (GIS) reflow process. In particular, the low-resistivity silicon pillars embedded in the glass cap are designed to serve as the electrical feedthrough and the fixed capacitance plate at the same time to simplify the fabrication process and improve the reliability. The fabrication process and the properties of the encapsulation cap were studied systematically. The resistance of the silicon vertical feedthrough was measured to be as low as 263.5 mΩ, indicating a good electrical interconnection property. Furthermore, the surface root-mean-square (RMS) roughnesses of glass and silicon were measured to be 1.12 nm and 0.814 nm, respectively, which were small enough for the final wafer bonding process. Anodic bonding between the encapsulation cap and the silicon wafer with sensing structures was conducted in a vacuum to complete the hermetic encapsulation. The proposed packaging scheme was successfully applied to a capacitive gyroscope. The quality factor of the packaged gyroscope achieved above 220,000, which was at least one order of magnitude larger than that of the unpackaged. The validity of the proposed packaging scheme could be verified. Furthermore, the packaging failure was less than 1%, which demonstrated the feasibility and reliability of the technique for high-performance MEMS vacuum packaging.

https://www.mdpi.com/1424-8220/19/1/93/pdf

Jian Yang

Papers

Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications

Research on the Piezoelectric Properties of AlN Thin Films for

Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

A T-Shape Aluminum Nitride Thin-Film Piezoelectric MEMS Resonant Accelerometer

Research on a 3D Encapsulation Technique for Capacitive MEMS Sensors Based on Through Silicon Via.