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Jiandong Ye

Researcher at Nanjing University

Publications -  359
Citations -  6658

Jiandong Ye is an academic researcher from Nanjing University. The author has contributed to research in topics: Chemistry & Chemical vapor deposition. The author has an hindex of 32, co-authored 280 publications receiving 4471 citations. Previous affiliations of Jiandong Ye include Singapore Science Park & Australian National University.

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Enhanced light output from deep ultraviolet light-emitting diodes enabled by high-order modes on a photonic crystal surface.

TL;DR: In this paper , the authors demonstrate the enhanced light output from 275-nm AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) structures via the in-plane modulation of shallow photonic crystal (PC) patterns that were fabricated on the p-AlGaN contact layer surface.
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Enhanced bioactivity and hydrothermal aging resistance of <scp>Y‐TZP</scp> ceramics for dental implant

TL;DR: In this article , a modified yttria-stabilized tetragonal zirconia polycrystals (Y-TZP) was prepared by 77S bioactive glass (BG) sol and akermanite (AKT) sol infiltration and microwave sintering.
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First-Principles GGA+U Study of Intermediate-Band Characters from Zn1−xMxO (M = 3d Transition-Metal) Alloys Suitable for High Efficiency Solar Cell*

TL;DR: In this article, the electronic structure characters for the Zn1−xMxO alloys with some Zn atoms in ZnO substituted by 3d transition-metal atoms (M), in order to find out which of these alloys could provide an intermediate band material used for fabricating high efficiency solar cell.
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Suppression and compensation effect of oxygen on heavily boron doping behavior in diamond films

TL;DR: In this paper , the suppression and compensation effect of oxygen on heavily boron doping behaviors and characteristics in microwave plasma chemical vapor deposition (MPCVD) diamond films are investigated.
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High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel

TL;DR: In this paper , the authors report radio-frequency (RF) MOSFETs with a 2DEG-like channel formed at the Si surface through the low-energy implantation of Si and rapid thermal activation process.