Jiandong Ye

TL;DR: In this paper, the hydrogen-terminated diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were constructed with a 50 nm Al2O3 gate insulator and a 350 nm Si3N4 passivation layer, which is compatible with the process of monolithic microwave-integrated circuits.

TL;DR: In this article, a simple reproducible and low-cost synthesis method for the preparation of s-tricalcium phosphate (s-TCP) was developed via wet mechanochemical treatment using calcium oxide and calcium hydrogen phosphate as raw materials.

TL;DR: In this article , the authors investigated the correlation of carrier transport, trapping and recombination kinetics in NiO/β-Ga2O3 p+-n heterojunction power diodes and showed that the modified Shockley-Read-Hall recombination mediated by majority carrier trap states with an activation energy of 0.64 eV dominates the trap-assisted tunneling process in the forward subthreshold conduction regime.

TL;DR: In this paper, the magnetic properties of (Mn, N)-codoped ZnO, with various interstitial structures of H, have been investigated, and the strong hybridization between H-impurity band and the Mn 3d minority spin states at the Fermi level results in the FM coupling between the spins of Mn and N, which is similar with the spin split donor impurity band model.