J
Jiandong Ye
Researcher at Nanjing University
Publications - 359
Citations - 6658
Jiandong Ye is an academic researcher from Nanjing University. The author has contributed to research in topics: Chemistry & Chemical vapor deposition. The author has an hindex of 32, co-authored 280 publications receiving 4471 citations. Previous affiliations of Jiandong Ye include Singapore Science Park & Australian National University.
Papers
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Journal ArticleDOI
Production of high-quality ZnO films by the two-step annealing method
Jiandong Ye,Shulin Gu,Shunming Zhu,F. Qin,S. M. Liu,Wei Liu,Xin Zhou,Liqun Hu,Rui Zhang,Youguo Shi,Yi Zheng +10 more
TL;DR: In this paper, a two-step annealing method is advanced to produce high-quality ZnO films with excellent structural, electrical, and optical properties, which are attributed to the creation and annihilation of extrinsic trap states of antisite oxygen OZn and oxygen vacancies VO.
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Carrier Transport and Gain Mechanisms in $\beta$ –Ga 2 O 3 -Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors
Yang Xu,Xuanhu Chen,Dong Zhou,Fang-Fang Ren,Jianjun Zhou,Song Bai,Hai Lu,Shulin Gu,Rong Zhang,Youdou Zheng,Jiandong Ye +10 more
TL;DR: In this article, the carrier transport and gain mechanisms are exploited in the Ga2O3-based metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts.
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Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Li Li,Yanan Guo,Xiangyuan Cui,Rongkun Zheng,Kiyonobu Ohtani,Charlie Kong,Anna V. Ceguerra,Michael P. Moody,Jiandong Ye,Hoe Hark Tan,Chennupati Jagadish,Hui Liu,Catherine Stampfl,Hideo Ohno,Simon P. Ringer,Fumihiro Matsukura +15 more
TL;DR: In this paper, the magnetism of Co-doped ZnO films was investigated and the origin of the observed ferromagnetism was not carrier induced, as confirmed by electric-field effect measurements.
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Band Alignment and Interface Recombination in NiO/ β -Ga 2 O 3 Type-II p-n Heterojunctions
Hehe Gong,Xuanhu Chen,Yang Xu,Yanting Chen,Fang-Fang Ren,Bin Liu,Shulin Gu,Rong Zhang,Jiandong Ye +8 more
TL;DR: In this article, the authors report the band alignment, band bending, and transport mechanism in the NiO/β$ -Ga2O3 p-n heterojunction (HJ) which exhibits high performances with a rectification ratio over 1011, a turn-on voltage of 187 V and specific ON-resistance of 102.
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β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2
Qinglong Yan,Hehe Gong,Jincheng Zhang,Jiandong Ye,Hong Zhou,Zhihong Liu,Shengrui Xu,Chenlu Wang,Zhuangzhuang Hu,Qian Feng,Jing Ning,Chunfu Zhang,Peijun Ma,Rong Zhang,Yue Hao +14 more
TL;DR: In this paper, a β-Ga2O3 HJBS diode with p-type NiOx was shown to achieve a low specific on-resistance (Ron,sp) of 1.94 mΩ cm2 with a breakdown voltage 1.34