J
Jike Lyu
Researcher at Institute of Cost and Management Accountants of Bangladesh
Publications - 24
Citations - 572
Jike Lyu is an academic researcher from Institute of Cost and Management Accountants of Bangladesh. The author has contributed to research in topics: Ferroelectricity & Thin film. The author has an hindex of 10, co-authored 19 publications receiving 336 citations. Previous affiliations of Jike Lyu include Northeastern University (China).
Papers
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Journal ArticleDOI
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Saúl Estandía,Nico Dix,Jaume Gazquez,Ignasi Fina,Jike Lyu,Matthew F. Chisholm,Josep Fontcuberta,Florencio Sánchez +7 more
TL;DR: The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia was proved in this article, where the critical impact on the stability of the phase was investigated.
Journal ArticleDOI
Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
TL;DR: The epitaxial orthorhombic Hf0.5Zr 0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition as mentioned in this paper.
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Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
TL;DR: The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated as mentioned in this paper.
Journal ArticleDOI
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
Jike Lyu,Ignasi Fina,Romain Bachelet,Guillaume Saint-Girons,Saúl Estandía,Jaume Gazquez,Josep Fontcuberta,Florencio Sánchez +7 more
TL;DR: SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5O2 and La2/3Sr1/3MnO3 bottom electrodes on Si(001) as discussed by the authors.
Journal ArticleDOI
Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance.
TL;DR: The demonstration of excellent ferroelectric properties in epitaxial films of Hf0.5Zr 0.5O2 on Si(001) is relevant toward fabrication of devices that require homogeneity in the nanometer scale, as well as for better understanding of the intrinsic properties of this promising ferroElectric oxide.