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Florencio Sánchez

Researcher at Institute of Cost and Management Accountants of Bangladesh

Publications -  282
Citations -  7116

Florencio Sánchez is an academic researcher from Institute of Cost and Management Accountants of Bangladesh. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 39, co-authored 264 publications receiving 5951 citations. Previous affiliations of Florencio Sánchez include University of Barcelona & Spanish National Research Council.

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Electric-field control of exchange bias in multiferroic epitaxial heterostructures.

TL;DR: It is shown that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer, which may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.
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Surface symmetry-breaking and strain effects on orbital occupancy in transition metal perovskite epitaxial films

TL;DR: It is shown that it can be combined with substrate-induced epitaxial strain to tailor at will the electron occupancy of in-plane and out-of-plane surface electronic orbitals, opening the possibility of an active tuning of surface electronic and magnetic properties as well as chemical properties.
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Towards Oxide Electronics: a Roadmap

Mariona Coll, +57 more
TL;DR: The Towards Oxide-Based Electronics (TO-BE) Action as mentioned in this paper has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries in a wide four-year project.
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Multiferroic iron oxide thin films at room-temperature

TL;DR: The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2 O3 in novel devices.
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High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces

TL;DR: It is shown that epitaxial interfaces are not a prerequisite: conducting amorphous LaAlO3 and other oxides can also be prepared and open a new perspective both for materials research and for elucidating the ultimate microscopic mechanism of carrier doping.