Journal ArticleDOI
Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
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TLDR
The epitaxial orthorhombic Hf0.5Zr 0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition as mentioned in this paper.Abstract:
Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial orthorhombic films, (111)-oriented and with a very flat surface, show robust ferroelectric properties at room temperature. They present a remnant polarization around 20 μC/cm2 without the need of a wake-up process, a large coercive electric field of around 3 MV/cm, an extremely long retention extending well beyond 10 years, and an endurance up to about 108 cycles. Such outstanding properties in the nascent research on epitaxial HfO2-based ferroelectric films can pave the way for a better understanding of the effects of orientation, interfaces, strain, and defects on ferroelectricity in HfO2.read more
Citations
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Journal ArticleDOI
Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier
Zheng Wen,Zheng Wen,Di Wu +2 more
TL;DR: Recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier, and electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectrode interfaces are discussed with the enhancement of memory performance.
Journal ArticleDOI
Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing
Herng Yau Yoong,Haijun Wu,Jianhui Zhao,Han Wang,Rui Guo,Juanxiu Xiao,Bangmin Zhang,Ping Yang,Stephen J. Pennycook,Ning Deng,Xiaobing Yan,Jingsheng Chen +11 more
Journal ArticleDOI
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Saúl Estandía,Nico Dix,Jaume Gazquez,Ignasi Fina,Jike Lyu,Matthew F. Chisholm,Josep Fontcuberta,Florencio Sánchez +7 more
TL;DR: The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia was proved in this article, where the critical impact on the stability of the phase was investigated.
Journal ArticleDOI
Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
TL;DR: The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated as mentioned in this paper.
Journal ArticleDOI
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
Jike Lyu,Ignasi Fina,Romain Bachelet,Guillaume Saint-Girons,Saúl Estandía,Jaume Gazquez,Josep Fontcuberta,Florencio Sánchez +7 more
TL;DR: SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5O2 and La2/3Sr1/3MnO3 bottom electrodes on Si(001) as discussed by the authors.
References
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Journal ArticleDOI
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
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Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
Min Hyuk Park,Young Hwan Lee,Han Joon Kim,Yu Jin Kim,Taehwan Moon,Keum Do Kim,Johannes Müller,Alfred Kersch,Uwe Schroeder,Thomas Mikolajick,Cheol Seong Hwang +10 more
TL;DR: The coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.
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On the structural origins of ferroelectricity in HfO2 thin films
TL;DR: In this article, a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films is presented, which provides unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization.
Journal ArticleDOI
Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
TL;DR: In this paper, the authors review the recent progress in this emerging field and critically assesses its current and future potential, and provide an empirical description of the ferroelectric stabilization in HfO2, from which additional dopants as well as alternative stabilization mechanism can be derived.
Journal ArticleDOI
The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
TL;DR: In this paper, the effects of film strain and crystallographic orientation on the properties of Hf0.5Zr 0.5O2 films were examined using a (111)-textured Pt bottom electrode.