J
Jin-Jian Zhou
Researcher at California Institute of Technology
Publications - 49
Citations - 1706
Jin-Jian Zhou is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Electron mobility & Scattering. The author has an hindex of 19, co-authored 42 publications receiving 1178 citations. Previous affiliations of Jin-Jian Zhou include Chinese Academy of Sciences & Beijing Institute of Technology.
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Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
Wanxiang Feng,Wanxiang Feng,Wanxiang Feng,Yugui Yao,Wenguang Zhu,Wenguang Zhu,Jin-Jian Zhou,Jin-Jian Zhou,Wang Yao,Di Xiao,Di Xiao +10 more
TL;DR: In this article, the fatigue properties of the sample under repeated bipolar or unipolar pulses were further analyzed, and the formation of leakage paths along conductive domain walls, and it is the domain reconstruction during repeated polarization flipping that results in the complex transport behavior observed.
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Ab initio electron mobility and polar phonon scattering in GaAs
Jin-Jian Zhou,Marco Bernardi +1 more
TL;DR: In this paper, an efficient ab initio scheme to compute and converge the e−ph relaxation times (RTs) and electron mobility in polar materials is presented. But the method is limited to GaAs.
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Large-gap quantum spin Hall insulator in single layer bismuth monobromide Bi4Br4.
TL;DR: This work predicts a new large-gap QSH insulator with bulk direct band gap of ∼ 0.18 eV, in single-layer Bi4Br4, which could be exfoliated from its three-dimensional bulk material due to the weakly bonded layered structure.
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Perturbo: a software package for ab initio electron-phonon interactions, charge transport and ultrafast dynamics
TL;DR: Perturbo as mentioned in this paper is a software package for first-principles calculations of charge transport and ultrafast carrier dynamics in materials, which can compute phonon-limited transport properties such as the conductivity, carrier mobility and Seebeck coefficient.
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Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide Bi$_{4}$Br$_{4}$
TL;DR: In this article, the authors predict a new large-gap QSH insulator with bulk direct band gap of 0.18 eV, in single-layer Bi${4}$Br$_{4}$, which could be exfoliated from its three-dimensional bulk material due to the weakly-bonded layered structure.