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Jin Ok Hwang

Researcher at KAIST

Publications -  15
Citations -  2670

Jin Ok Hwang is an academic researcher from KAIST. The author has contributed to research in topics: Graphene & Oxide. The author has an hindex of 14, co-authored 15 publications receiving 2449 citations.

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Graphene oxide thin films for flexible nonvolatile memory applications.

TL;DR: The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy.
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Three-dimensional self-assembly of graphene oxide platelets into mechanically flexible macroporous carbon films.

TL;DR: The self-assembly of chemically modified graphene platelets into a complex 3D morphology was achieved by the “breath-figure” method, which is a straightforward procedure for synthesizing large-area porous polymer films.
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Chemical structures of hydrazine-treated graphene oxide and generation of aromatic nitrogen doping

TL;DR: These experiments suggest that hydrazine treatment of graphene oxide causes insertion of an aromatic N(2) moiety in a five-membered ring at the platelet edges and also restores graphitic networks on the basal planes.
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Workfunction-Tunable, N-Doped Reduced Graphene Transparent Electrodes for High-Performance Polymer Light-Emitting Diodes

TL;DR: Workfunction-tunable, highly conductive, N-doped reduced graphene film is demonstrated, which is obtainable from the spin-casting of graphene oxide dispersion and can be successfully employed as a transparent cathode for high-performance polymer light-emitting diodes (PLEDs) as an alternative to fluorine- doped tin oxide (FTO).
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Vertical ZnO nanowires/graphene hybrids for transparent and flexible field emission

TL;DR: In this paper, a transparent and flexible optoelectronic material composed of vertically aligned ZnO NWs grown on reduced graphene/PDMS substrates was presented, which showed a typical metal-semiconductor ohmic contact without a contact barrier.