Showing papers by "Jingbo Li published in 2023"

High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2 /Te Tunneling Heterostructure.

Abstract: Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS2 /Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W-1 , an outstanding detectivity of 9.28 × 1013 Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.

Interfacial Chemical Bond Engineering in a Direct Z-Scheme g-C3N4/MoS2 Heterojunction.

Abstract: The Z-scheme heterojunction shows great potential in photocatalysis due to its superior carrier separation efficiency and strong photoredox properties. However, how to regulate the charge separation at the nanometric interface of heterostructures still remains a challenge. Here, we take g-C3N4 and MoS2 as models and design the Mo-N chemical bond, which connects exactly the CB of MoS2 and VB of g-C3N4. Thus, the Mo-N bond could act as an atomic-level interfacial "bridge" that provides a direct migration path of charge carriers between g-C3N4 and MoS2. Experiments confirmed that the Mo-N bond and the internal electric field promote greatly the photogenerated carrier separation. The optimized photocatalyst exhibits a high hydrogen evolution rate that is about 19.6 times that of the pristine bulk C3N4. This study demonstrates the key role of an atomic-level interfacial chemical bond design in heterojunctions and provides a new idea for the design of efficient catalytic heterojunctions.

Van der Waals Heterostructures With Built‐In Mie Resonances For Polarization‐Sensitive Photodetection

Abstract: Few‐layer transition metal dichalcogenides (TMDs) and their combination as van der Waals heterostructures provide a promising platform for high‐performance optoelectronic devices. However, the ultrathin thickness of TMD flakes limits efficient light trapping and absorption, which triggers the hybrid construction with optical resonant cavities for enhanced light absorption. The optical structure enriched photodetectors can also be wavelength‐ and polarization‐sensitive but require complicated fabrication. Herein, a new‐type TMD‐based photodetector embedded with nanoslits is proposed to enhance light trapping. Taking ReS2 as an example, strong anisotropic Mie‐type optical responses arising from the intrinsic in‐plane anisotropy and nanoslit‐enhanced anisotropy are discovered. Owing to the nanoslit‐enhanced optical resonances and band engineering, excellent photodetection performances are demonstrated with high responsivity of 27 A W−1 and short rise/decay times of 3.7/3.7 ms. More importantly, through controlling the angle between the nanoslit orientation and the polarization direction to excite different resonant modes, polarization‐sensitive photodetectors with anisotropy ratios from 5.9 to 12.6 can be achieved, representing one of the most polarization‐sensitive TMD‐based photodetectors. The depth and orientation of nanoslits are demonstrated crucial for optimizing the anisotropy ratio. The findings bring an effective scheme to construct high‐performance and polarization‐sensitive photodetectors.

Type II Homo-Type Bi2O2Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible–Near-Infrared Photodetectors

Abstract: Bi2O2Se nanosheets, an emerging ternary non-van der Waals two-dimensional (2D) material, have garnered considerable research attention in recent years owing to their robust air stability, narrow indirect bandgap, high mobility, and diverse intriguing properties. However, most of them show high dark current and relatively low light on/off ratio and slow response speed because of the large charge carrier concentration and bolometric effect, hindering their further application in low-energy-consuming optoelectronics. Herein, a homotype van der Waals heterostructure based on exfoliated n-InSe integrated with chemical vapor deposition (CVD)-grown n-Bi2O2Se nanosheets that have type II band alignment was fabricated. The efficient interfacial charge separation, strong interlayer coupling, and effective built-in electric field across the heterointerface demonstrated excellent, stable, and broadband self-driven photodetection in the range 400–1064 nm. Specifically, a high responsivity (R) of 75.2 mA·W–1 and a high specific detectivity (D*) of 1.08 × 1012 jones were achieved under 405 nm illumination. Additionally, a high R of 13.3 mA·W–1 and a high D* of 2.06 × 1011 jones were achieved under 980 nm illumination. Meanwhile, an ultrahigh Ilight/Idark ratio over 105 and a fast response time of 5.8/15 ms under 405 nm illumination confirmed the excellent photosensitivity and fast response behavior. Furthermore, R could be enhanced to 13.6 and 791 mA·W–1 under 405 and 980 nm illumination at a drain–source voltage (Vds) of 1 V, respectively, originating from a lower potential barrier. This study suggested that the Bi2O2Se nanosheet/InSe nanoflake homotype heterojunction can offer potential applications in next-generation broadband photodetectors that consume low energy and exhibit high performance.

Reconfigurable and Broadband Polarimetric Photodetector

Abstract: The sensitive detection of light polarization besides the intensity and wavelength, can provide a new degree of freedom for more and clearer information of imaging targets in night, fog, and smoke environment. However, the conventional filter‐integrated polarimetric photodetectors suffer from the complicated fabrication process and limited spectral range. Herein, broadband and polarization‐sensitive photodetectors are achieved with reconfigurable operation mode, utilizing the linear dichroism and narrow band gap of 2D As0.4P0.6 with in‐plane anisotropic structure. In As0.4P0.6‐MoTe2 heterojunction device, both photo‐gating and photovoltaic modes are operated and switchable, contributing to high responsivity (1590 A W−1 at 405 nm and 14.7 A W−1 at 1550 nm) and ultrafast speed (25 µs) in the wide spectral band (405–1550 nm). Interestingly, an optical reversal is observed on both linear dichroism and polarimetric photocurrent due to the wavelength‐dependent polarization reverse nature of the As0.4P0.6 flakes. The dichroism ratio of photocurrent can be modulated from unity to ≈10 by varying the gate voltage, enabling the reconfigurable detection mode from polarization‐independence to polarization‐susceptibility. This study demonstrates a new prototype device comprising low symmetric van der Waals heterostructure, possessing the gate‐tunability on both photo‐gain and dichroism ratio, toward high performance, reconfigurable, broadband, and polarization‐resolved photodetection and imaging applications.

Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging.

Abstract: Broadband photodetectors are a category of optoelectronic devices that have important applications in modern communication information. γ-InSe is a newly developed two-dimensional (2D) layered semiconductor with an air-stable and low-symmetry crystal structure that is suitable for polarization-sensitive photodetection. Herein, we report a P-N photodiode based on 3D Ge/2D γ-InSe van der Waals heterojunction (vdWH). A built-in electric field is introduced at the p-Ge/n-InSe interface to suppress the dark current and accelerate the separation of photogenerated carriers. Moreover, the heterojunction belongs to the accumulation mode with a well-designed type-II band arrangement, which is suitable for the fast separation of photogenerated carriers. Driven by these advantages, the device exhibits excellent photovoltaic performance within the detection range of 400 to 1600 nm and shows a double photocurrent peak at around 405 and 1550 nm. In particular, the responsivity (R) is up to 9.78 A W-1 and the specific detectivity (D*) reaches 5.38 × 1011 Jones with a fast response speed of 46/32 μs under a 1550 nm laser. Under blackbody radiation, the room temperature R and D* in the mid-wavelength infrared region are 0.203 A W-1 and 5.6 × 108 Jones, respectively. Moreover, polarization-sensitive light detection from 405-1550 nm was achieved, with the dichroism ratios of 1.44, 3.01, 1.71, 1.41 and 1.34 at 405, 635, 808, 1310 and 1550 nm, respectively. In addition, high-resolution single-pixel imaging capability is demonstrated at visible and near-infrared wavelengths. This work reveals the great potential of the γ-InSe/Ge photodiode for high-performance, broadband, air-stable and polarization-sensitive photodetection.

混合维度WS2/WSe2/Si单极势垒异质结构用于高性能光电探测

Abstract: The use of unipolar barrier structures that can selectively block dark current but allow photocurrent to flow unimpededly has emerged as an effective strategy for constructing high-performance photodetectors. In particular, two-dimensional (2D) materials with tunable band structures and self-passivated surfaces not only satisfy band-matching requirements but also avoid interface defects and lattice mismatches, which are attractive for designing unipolar barriers. Here, we demonstrate a mixed-dimensional WS2/WSe2/p-Si unipolar barrier photodetector, in which 2D WS2 acts as the photon absorber, atomically thin WSe2 as the unipolar barrier, and 3D p-Si as the photogenerated carrier collector. The intercalated WSe2 not only mitigates detrimental substrate effects but also forms a high-conduction band barrier to filter out several dark current components with the photocurrent flowing unimpededly. Driven by tunneling and carrier multiplication effects, the WS2/WSe2/p-Si device exhibits a high light on/off ratio above 105, a high detectivity of 2.39 × 1012 Jones, and a fast rise/decay time of 8.47/7.98 ms. These figures of merit are significantly improved over the conventional WS2/p-Si device, opening up an effective scheme for designing high-performance optoelectronic devices.

Diverse Modes Regulated Photoresponse and High-Resolution Imaging based on van der Waals Semimetal PtTe2/Semiconductor MoTe2 Junctions

Abstract: Exploration towards emerging 2D Weyl semimetals (WSMs) based van der Waals (vdWs) structures have become an efficient path for fabricating low-consumption multifunctional devices. 2D WSMs represented by 1T’-WTe2 and 1T’-MoTe2...

Mixed-dimensional WS2/WSe2/Si unipolar barrier heterostructure for high-performance photodetection

Abstract: The use of unipolar barrier structures that can selectively block dark current but allow photocurrent to flow unimpededly has emerged as an effective strategy for constructing high-performance photodetectors. In particular, two-dimensional (2D) materials with tunable band structures and self-passivated surfaces not only satisfy band-matching requirements but also avoid interface defects and lattice mismatches, which are attractive for designing unipolar barriers. Here, we demonstrate a mixed-dimensional WS2/WSe2/p-Si unipolar barrier photodetector, in which 2D WS2 acts as the photon absorber, atomically thin WSe2 as the unipolar barrier, and 3D p-Si as the photogenerated carrier collector. The intercalated WSe2 not only mitigates detrimental substrate effects but also forms a high-conduction band barrier to filter out several dark current components with the photocurrent flowing unimpededly. Driven by tunneling and carrier multiplication effects, the WS2/WSe2/p-Si device exhibits a high light on/off ratio above 105, a high detectivity of 2.39 × 1012 Jones, and a fast rise/decay time of 8.47/7.98 ms. These figures of merit are significantly improved over the conventional WS2/p-Si device, opening up an effective scheme for designing high-performance optoelectronic devices.

Integrating Graphene Enables Improved and Gate‐Tunable Photovoltaic Effect in Van der Waals Heterojunction

Abstract: Van der Waals (vdW) heterojunction has emerged as promising building blocks for the next generation of optoelectronics, which can fulfill the increasing demands of miniaturization, high density of integration, and low power consumption. The photovoltaic effect is one of the crucial functions for fast photo‐detection and energy‐harvesting applications. Here, graphene is integrated into vdW WS2/WSe2 heterojunction, the graphene can serve as electron and hole transport layers, boosting the collection efficiency of photo‐excited carriers and thus improving the photovoltaic effect. The graphene‐integrated device exhibits superior power‐conversion‐efficiency (PCE) up to 9.08%, one order of magnitude improvement compared to the device with metal‐WS2/WSe2‐metal configuration. Moreover, the back gate has great modulation on its photovoltaic effect due to the large gate‐tunability of band bending at the interface. Operating as self‐driven photo‐diode, it also achieves outstanding photodetection performance with high photo‐switching ratio of 1 × 106, high detectivity (D*) of 2.66 × 1012 Jones, and fast speed of 110 µs, all the parameters are improved by nearly one order of magnitude compared to the device without graphene integration. This work provides a universal approach by integrating graphene as vdW contact to significantly improve the photovoltaic effect and photodetection property toward highly efficient energy‐harvest and photodetector applications.

Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance.

Abstract: In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi2O2Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi2O2Se/2H-MoTe2 van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W-1, and a high specific detectivity (D*) of 3.73 × 1011 Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W-1, 3.84 × 1012 Jones, 0.52, and 7.21% at Vg = -60 V through a large band offset originated from the n+-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.

Strong Anharmonicities Assisted Low Lattice Thermal Conductivities and High Thermoelectric Performance in Double-anion Mo2XY2 (X = S, Se, Te; Y = Cl, Br, I) Semiconductors

Abstract: The thermoelectric properties of layered Mo2XY2 (X = S, Se, Te; Y = Cl, Br, I) materials are systematically investigated by first-principles approach. Soft transverse acoustic modes and direct Mo d-Mo d couplings give rise to strong anharmonicities and low lattice thermal conductivities. The double anions with distinctly different electronegativities of Mo2XY2 monolayers can reduce the correlation between electron transport and phonon scattering, and further benefit much to their good thermoelectric properties. Thermoelectric properties of these Mo2XY2 monolayers exhibit obvious anisotropies due to the direction-dependent chemical bondings and transport properties. Furthermore, their thermoelectric properties strongly depend on carrier type (n- or p-type), carrier concentration and temperature. It is found that n-type Mo2XY2 monolayers can be excellent thermoelectric materials with high electric conductivity, σ, and figures of merit, ZT. Choosing the types of X and Y anions of Mo2XY2 is an effective strategy to optimize their thermoelectric performance. These results provide rigorous understanding on thermoelectric properties of double-anions compounds and important guidance for achieving high thermoelectric performance in multi-anion compounds.

Effect of high-temperature remelting on the properties of Sn-doped β-Ga2O3 crystal grown using the EFG method

Abstract: We compared the crystal properties of the blue area grown before high-temperature remelting and the colorless area after high-temperature remelting through characterization tests, such as AFM, XRD, PL, ICP, LCM, and HALL.

Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe2/Ta2NiSe5/WSe2 van der Waals Dual Heterojunction.

Abstract: Self-powered photodetectors have triggered widespread attention because of the requirement of Internet of Things (IoT) application and low power consumption. However, it is challenging to simultaneously implement miniaturization, high quantum efficiency, and multifunctionalization. Here, we report a high-efficiency and polarization-sensitive photodetector enabled by two-dimensional (2D) WSe2/Ta2NiSe5/WSe2 van der Waals (vdW) dual heterojunctions (DHJ) along with a sandwich-like electrode pair. On account of enhanced light collection efficiency and two opposite built-in electric fields at the hetero-interfaces, the DHJ device achieves not only a broadband spectral response of 400-1550 nm but outstanding performance under 635 nm light illumination including an ultrahigh external quantum efficiency (EQE) of 85.5%, a pronounced power conversion efficiency (PCE) of 1.9%, and a fast response speed of 420/640 μs, which is much better than that of the WSe2/Ta2NiSe5 single heterojunction (SHJ). Significantly, based on the strong in-plane anisotropy of 2D Ta2NiSe5 nanosheets, the DHJ device shows competitive polarization sensitivities of 13.9 and 14.8 under 635 and 808 nm light, respectively. Furthermore, an excellent self-powered visible imaging capability based on the DHJ device is demonstrated. These results pave a promising platform for realizing self-powered photodetectors with high performance and multifunctionality.

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

Abstract: With continuous size scaling, the surface dangling bonds and short-channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra-thin short-channel tunneling transistor is developed comprising all 2D- components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in-plane WSe2 channel, the switch states are realized by the gate-regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic-emission and tunneling. Under dual-gate configuration, the transistor exhibits high performance with drive current of 4.58 µA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain-induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high-speed tunneling current and unique short-channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof-of-concept transistor architecture relying on dual-gate modulation, opening up a promising perspective for next generation low-power, high-density, and large-scale IC technologies.

Anti-ambipolar and polarization-resolved behavior in MoTe2 channel sensitized with low-symmetric CrOCl

Abstract: Atomically thin two-dimensional (2D) materials make it possible to create a variety of van der Waals (vdW) heterostructures with different physical features and attributes, which enables the growth of innovative electronics and optoelectronics applications. The band alignment and charge transfer play a crucial role in the physical and optoelectrical properties of the vdW heterostructure. Here, we design a vdW heterojunction device comprising low-symmetric CrOCl to induce a stable anti-ambipolar behavior and polarization-sensitive photodetection performance. 2D CrOCl exhibits strong in-plane anisotropy and linear dichroism, and an anti-ambipolar transport behavior is observed in a MoTe2 channel due to the gate-tunable band bending and charge transfer at MoTe2/CrOCl interface. The devices also exhibit well photodetection performance with a responsivity of 1.05 A/W and a temporal response of 970 μs. Owing to the anisotropic CrOCl serving as a photosensitizing layer, the device achieves the capability of polarization-sensitive photodetection with a photocurrent dichroic ratio up to ∼6. This work offers a valid device model and design strategy to realize the versatile optoelectronics, including the anti-ambipolar transistor and polarimetric photodetectors.

Dual-Junctions Field Effect Transistor Based on MoS2/Te/MoS2

Abstract: In the applications of low-power device design and large-scale integrated circuit, MOSFETs play an important role but suffer from the doping complexity and short channel effect when the technology node is further shrinking. Thus, it is of great interest to develop new transistor architecture with atomically thin channel materials to meet the demand for high-density integration and low-power consumption electronics. Here, we develop a dual-junctions field-effect transistor (DJFET) consisting of van der Waals MoS2/Te/MoS2 heterojunctions where the MoS2 on top and bottom serves as dual-gate and the tellurium (Te) in middle is the carrier transport channel. The novel transistor exhibits superior transfer and output characteristics with p-type behavior, high mobility of 270.3 cm $^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ and large transconductance of $16.4~\mu \text{S}$ , competing with widely-reported MOSFETs based on 2-D semiconductors. Additionally, the devices can be operated as a self-driven photodetector with a high responsivity of 879.2 mAW $^{-{1}}$ and a specific detectivity of $3.47\times 10^{{11}}$ Jones. This work proposes a new dual-junctions transistor as a highly desirable candidate for next-generation electronic applications.

Room-Temperature Near-Infrared and Self-Powered Photodetectors Based on Graphite/WTe2/Ge Mixed van der Waals Heterostructure

Abstract: Herein, we report a graphite (Gr)/WTe2/Ge mixed-dimensional van der Waals (vdWs) heterojunction-based Schottky photodetector (PD) for self-powered near-infrared detection. Notably, the fabricated device can respond to the wide spectrum of 400–2200 nm with the optimal wavelength around 1550 nm. In particular, it exhibited remarkable photovoltaic characteristics with a maximum responsivity of 2.3 A/W, a specific detectivity of $3.4\times 10^{{10}}$ Jones, and a light ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of over $10^{{3}}$ with a fast response speed of 4.4/ $8.6 \mu \text{s}$ under 1550 nm. Moreover, a clear single-point image of “SCNU” in the self-driven mode can be obtained under 1550 nm illumination. The above results suggest that the constructed Gr/WTe2/Ge PD shows great potential in the field of ultrafast near-infrared detection and high-resolution imaging.

Bi2O2Se Nanowire/MoSe2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel.

Abstract: In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2 photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.

Integration of Self‐Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices

Abstract: With the rapid development of two‐dimensional semiconductor technology, the inevitable chemical disorder at a typical metal–semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect‐free van der Waals contacts have been achieved by utilizing topological Bi2Se3 as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe2 channel realizes a high responsivity of 20.5 A W−1, an excellent detectivity of 2.18 × 1012 Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high‐resolution visible‐light imaging capability of the WSe2 device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS2 and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high‐performance electronics and optoelectronics.