J
Jingwei Bai
Researcher at IBM
Publications - 49
Citations - 5122
Jingwei Bai is an academic researcher from IBM. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 25, co-authored 48 publications receiving 4809 citations. Previous affiliations of Jingwei Bai include Peking University & University of California.
Papers
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Journal ArticleDOI
High-speed graphene transistors with a self-aligned nanowire gate
Lei Liao,Yung-Chen Lin,Mingqiang Bao,Rui Cheng,Jingwei Bai,Yuan Liu,Yongquan Qu,Kang L. Wang,Yu Huang,Xiangfeng Duan +9 more
TL;DR: On-chip microwave measurements demonstrate that the self-aligned graphene transistors have a high intrinsic cut-off (transit) frequency of fT = 100–300 GHz, with the extrinsic fT largely limited by parasitic pad capacitance.
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Plasmon resonance enhanced multicolour photodetection by graphene
Yuan Liu,Rui Cheng,Lei Liao,Hailong Zhou,Jingwei Bai,Gang Liu,Lixin Liu,Yu Huang,Xiangfeng Duan +8 more
TL;DR: It is shown that metallic plasmonic nanostructures can be integrated with graphene photodetectors to greatly enhance the photocurrent and external quantum efficiency by up to 1,500%.
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Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask
TL;DR: A rational approach to fabricate graphene nanoribbons (GNRs) with sub-10 nm width by employing chemically synthesized nanowires as the physical protection mask in oxygen plasma etch is reported, which opens a new avenue to graphene nanors and other graphene nanostructures in the deep nanometer regime without sophisticated lithography.
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High-frequency self-aligned graphene transistors with transferred gate stacks.
Rui Cheng,Jingwei Bai,Lei Liao,Hailong Zhou,Yu Chen,Lixin Liu,Yung-Chen Lin,Shan Jiang,Yu Huang,Xiangfeng Duan +9 more
TL;DR: This study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits.
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Very large magnetoresistance in graphene nanoribbons
Jingwei Bai,Rui Cheng,Faxian Xiu,Lei Liao,Minsheng Wang,Alexandros Shailos,Kang L. Wang,Yu Huang,Xiangfeng Duan +8 more
TL;DR: The experimental observation of a significant enhancement in the conductance of a graphene nanoribbon field-effect transistor in a perpendicular magnetic field is reported, with a negative magnetoresistance of nearly 100% observed at low temperatures, with over 50% remaining at room temperature.