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Jisheng Pan

Researcher at Agency for Science, Technology and Research

Publications -  27
Citations -  648

Jisheng Pan is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Thin film. The author has an hindex of 12, co-authored 25 publications receiving 543 citations. Previous affiliations of Jisheng Pan include National University of Singapore.

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Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices

TL;DR: In this paper, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated, and two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect.
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Symmetrical negative differential resistance behavior of a resistive switching device

TL;DR: The experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO(2) is reported, and a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer is proposed.
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Formation of Nickel Oxide Nanotubes with Uniform Wall Thickness by Low‐Temperature Thermal Oxidation Through Understanding the Limiting Effect of Vacancy Diffusion and the Kirkendall Phenomenon

TL;DR: In this article, the step-wise oxidation mechanism of NiO nanowires is elucidated and a stepwise oxidation process by combining low temperature oxidation with a chemical etching step is utilized to produce NiO Nanotubes with uniform wall thickness from NiN wires.
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XPS Study on the Stability and Transformation of Hydrate and Carbonate Phases within MgO Systems

TL;DR: Observed changes in the binding energy (BE) indicate the formation of different components and the transformation of the hydrated carbonates from one form to another, which will influence the final performance of the carbonated blends.
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Zone-selective photoelectronic measurements of the local bonding and electronic dynamics associated with the monolayer skin and point defects of graphite

TL;DR: In this paper, the authors showed that the graphitic Dirac-Fermi polarons at an atomic vacancy or on graphene's zigzag edge arise from the polarization of the unpaired dangling-bond electrons by the undercoordination-induced local densification and quantum entrapment of the bonding electrons.