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Yingtao Li
Researcher at Lanzhou University
Publications - 95
Citations - 2870
Yingtao Li is an academic researcher from Lanzhou University. The author has contributed to research in topics: Resistive random-access memory & Non-volatile memory. The author has an hindex of 26, co-authored 90 publications receiving 2539 citations. Previous affiliations of Yingtao Li include Chinese Academy of Sciences & Nanyang Technological University.
Papers
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Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.
TL;DR: It is found that CFs are found to start growing from the anode rather than having to reach the cathode and grow backwards, and a new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.
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Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications
Yan Wang,Qi Liu,Shibing Long,Wei Wang,Qin Wang,Manhong Zhang,Sen Zhang,Yingtao Li,Yingtao Li,Qingyun Zuo,Jianhong Yang,Ming Liu +11 more
TL;DR: This paper investigates the resistive switching characteristics in a Cu/HfO(2):Cu/Pt sandwiched structure for multilevel non-volatile memory applications and finds different resistance values are achieved using different compliance currents in the program process.
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Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices
Hong Wang,Hong Wang,Yuanmin Du,Yingtao Li,Bowen Zhu,Wan Ru Leow,Yuangang Li,Jisheng Pan,Tao Wu,Xiaodong Chen +9 more
TL;DR: In this paper, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated, and two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect.
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Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications
Yingtao Li,Shibing Long,Manhong Zhang,Liu Qi,Lubing Shao,Zhang Sen,Yan Wang,Qingyun Zuo,Su Liu,Ming Liu +9 more
TL;DR: In this paper, the reliable resistive switching properties of Au/ZrO2/Ag structure fabricated with full room temperature process are demonstrated and the tested devices show low operation voltages (< 1 V, high resistance ratio (about 104), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 °C).
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Thermal crosstalk in 3-dimensional RRAM crossbar array
Pengxiao Sun,Pengxiao Sun,Nianduan Lu,Ling Li,Yingtao Li,Hong Wang,Hangbing Lv,Qi Liu,Shibing Long,Su Liu,Ming Liu +10 more
TL;DR: It is revealed that the reset process is dominated by transient thermal effect in 3D RRAM array, and possible methods for alleviating thermal crosstalk effect while further advancing the scaling potential are provided and verified by numerical simulation.