Jjh Joost Gielis

TL;DR: In this article, the authors demonstrate that the surface passivation of Al2O3 can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density.

TL;DR: In this paper, a contactless characterization of c-Si/Al2O3 interfaces by optical second-harmonic generation (SHG) has revealed a negative fixed charge density in as-deposited Al 2O3 on the order of 1011 cm−2 that increased to 1012−1013 cm−2 upon anneal.

TL;DR: In this article, the surface and interface sensitive nonlinear optical technique of second-harmonic generation (SHG) is a very useful diagnostic in studying surface and Interface properties in thin film systems and can provide relevant information during thin film processing.

TL;DR: In this article, the authors investigated the interface formation between Si thin films and c-Si by simultaneously applying three complementary optical techniques in real time during low temperature Si film growth, and demonstrated that the combination of the techniques provided a profound method to control processes occurring during Si thin film growth.

TL;DR: In this paper, the properties of the interface between hot-wire CVD Si thin films and H-terminated c-Si substrates have been studied during film growth by three complementary in situ techniques Spectroscopic ellipsometry has been used to determine the optical properties and thickness of the films, whereas information on the H-bonding modes and H depth profile has been obtained by attenuated total reflection infrared spectroscopy Second-harmonic generation (SHG), a nonlinear optical technique sensitive to surface and interface states.