J
Joanne Yim
Researcher at University of California, Berkeley
Publications - 20
Citations - 1034
Joanne Yim is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Nanowire & Silicon. The author has an hindex of 9, co-authored 20 publications receiving 919 citations. Previous affiliations of Joanne Yim include University of California & Lawrence Berkeley National Laboratory.
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Journal ArticleDOI
Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams
J. Cao,J. Cao,Elif Ertekin,Varadharajan Srinivasan,Wen Fan,Wen Fan,Simon Huang,Haimei Zheng,Joanne Yim,Joanne Yim,D. R. Khanal,D. R. Khanal,D. F. Ogletree,Jeffrey C. Grossman,Junqiao Wu,Junqiao Wu +15 more
TL;DR: In this article, the Mott transition between a low-temperature insulating phase and a high temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature.
Journal ArticleDOI
Large kinetic asymmetry in the metal-insulator transition nucleated at localized and extended defects
Wen Fan,Wen Fan,Jinbo Cao,Jinbo Cao,Jan Seidel,Yijia Gu,Joanne Yim,Joanne Yim,C. Barrett,C. Barrett,Kin Man Yu,Junfang Ji,Ramamoorthy Ramesh,Ramamoorthy Ramesh,Long Qing Chen,Junqiao Wu,Junqiao Wu +16 more
TL;DR: In this article, it was shown that point defects and twin walls can serve as dynamical heterogeneous nucleation seeds and eliminate superheating in the metal-insulator transition.
Journal ArticleDOI
Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering.
Fatima Toor,Jeff Miller,Lauren M. Davidson,Logan Nichols,Wenqi Duan,Michael Jura,Joanne Yim,Joanne Forziati,Marcie R. Black +8 more
TL;DR: The chemistry of MACE is reviewed and how changing parameters in the wet etch process effects the resulting texture on the Si surface is explored, which is critical for commercializing the black Si technology.
Journal ArticleDOI
Effects of quantum confinement on the doping limit of semiconductor nanowires.
TL;DR: It is found that the generation of amphoteric native defects strongly limits maximum achievable carrier concentrations for nanowires with small widths where quantum confinement is appreciable.
Journal ArticleDOI
Effects of surface states on electrical characteristics of InN and In 1-x Ga x N
Joanne Yim,Joanne Yim,R. E. Jones,R. E. Jones,Kin Man Yu,Joel W. Ager,Wladek Walukiewicz,William J. Schaff,Junqiao Wu,Junqiao Wu +9 more
TL;DR: In this paper, the authors used Poisson's equation over a range of bias voltages for an electrolyte-based capacitance-voltage measurement configuration, and calculated the band bending and space charge distribution in this system and developed an electronic model generally applicable to both p and n-type group-III-nitride thin films.