Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams
J. Cao,J. Cao,Elif Ertekin,Varadharajan Srinivasan,Wen Fan,Wen Fan,Simon Huang,Haimei Zheng,Joanne Yim,Joanne Yim,D. R. Khanal,D. R. Khanal,D. F. Ogletree,Jeffrey C. Grossman,Junqiao Wu,Junqiao Wu +15 more
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In this article, the Mott transition between a low-temperature insulating phase and a high temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature.Abstract:
Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.read more
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Local strain engineering in atomically thin MoS2.
Andres Castellanos-Gomez,Rafael Roldán,Emmanuele Cappelluti,Michele Buscema,Francisco Guinea,Herre S. J. van der Zant,Gary A. Steele +6 more
TL;DR: A nonuniform tight-binding model is developed to calculate the electronic properties of MoS2 nanolayers with complex and realistic local strain geometries, finding good agreement with the experimental results.
Journal ArticleDOI
Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial
Mengkun Liu,Harold Y. Hwang,Hu Tao,Andrew C. Strikwerda,Kebin Fan,George R. Keiser,Aaron Sternbach,Kevin G. West,Salinporn Kittiwatanakul,Jiwei Lu,Stuart A. Wolf,Fiorenzo G. Omenetto,Xin Zhang,Keith A. Nelson,Richard D. Averitt +14 more
TL;DR: The observation of an insulator–metal transition in vanadium dioxide induced by a terahertz electric field is reported, demonstrating that integration of metamaterials with complex matter is a viable pathway to realize functional nonlinear electromagnetic composites.
Journal ArticleDOI
Suppression of Metal-Insulator Transition in VO2 by Electric Field–Induced Oxygen Vacancy Formation
Jaewoo Jeong,Nagaphani Aetukuri,Nagaphani Aetukuri,Tanja Graf,Thomas D. Schladt,Mahesh G. Samant,Stuart S. P. Parkin +6 more
TL;DR: It is found that electrolyte gating of epitaxial thin films of VO2 suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed.
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Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
TL;DR: In this paper, the authors discuss the role of materials synthesis in influencing functional properties and discuss future research directions that may be worth consideration, concluding with a brief discussion on future directions that are worth consideration.
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Ultra-strength materials
TL;DR: In this paper, an overview of the principal deformation mechanisms of ultra-strength materials is presented, and the fundamental defect processes that initiate and sustain plastic flow and fracture are described, as well as the mechanics and physics of both displacive and diffusive mechanisms.
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