J
John A. Adamik
Researcher at Applied Materials
Publications - 11
Citations - 1572
John A. Adamik is an academic researcher from Applied Materials. The author has contributed to research in topics: Wafer & Deposition (phase transition). The author has an hindex of 8, co-authored 11 publications receiving 1572 citations.
Papers
More filters
Patent
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
Patent
CVD of silicon oxide using TEOS decomposition and in-situ planarization process
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this paper, a high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD and plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
Patent
Process for PECVD of silicon oxide using TEOS decomposition
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this article, a high pressure, high throughput, single wafer, semiconductor processing reactor is described which is capable of thermal CVD, plasma-enhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
Patent
Plasma-enhanced CVD process using TEOS for depositing silicon oxide
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this paper, a high pressure, high throughput, single wafer, semiconductor processing reactor is described which is capable of thermal CVD, plasma-enhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
Patent
Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this paper, the authors present a substrate processing reactor capable of thermal CVD, plasma-enhanced CVD and plasma assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing.