J
John J. Boeckl
Researcher at Wright-Patterson Air Force Base
Publications - 26
Citations - 612
John J. Boeckl is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: Graphene & Silicon. The author has an hindex of 11, co-authored 26 publications receiving 511 citations.
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Journal ArticleDOI
Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Jeongho Park,William C. Mitchel,L. Grazulis,H. E. Smith,Kurt G. Eyink,John J. Boeckl,David H. Tomich,Shanee D. Pacley,John E. Hoelscher +8 more
TL;DR: A novel growth method (carbon molecular beam epitaxy (CMBE) has been developed to produce high-quality and large-area epitaxial graphene that demonstrates significantly improved controllability of the graphene growth.
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Adsorption and Diffusion of Oxygen on Single-Layer Graphene with Topological Defects
TL;DR: In this article, the effects of oxygen adsorption and diffusion on the stability, morphology, and charge transfer in single-layer graphene with structural point defects were investigated by density functional theory.
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Graphene Quantum Dots Electrochemistry and Sensitive Electrocatalytic Glucose Sensor Development
TL;DR: The developed GOx-GQDs biosensor responds efficiently and linearly to the presence of glucose over concentrations ranging between 10 μM and 3 mM with a limit of detection of 1.35 μM, opening up potential sensing applications in medicine as well as bio-nanotechnology.
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Fine-tuning size of gold nanoparticles by cooling during reverse micelle synthesis.
TL;DR: By lowering the reaction temperature during metal ion reduction in a reverse micelle system, gold nanoparticle size can be subtly tuned from 6.6 to 2.2 nm in diameter, enabling a wide range of products obtainable via a simple, quick, reproducible synthesis.
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A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I(D)/I(D′) intensity ratio by theoretical analysis
TL;DR: In this paper, a method combining first principles density functional theory and tight-binding was developed to distinguish defects in defective single-layer graphene (DSLG) by quantifying defect-induced Raman intensities.