L
L. Grazulis
Researcher at Air Force Research Laboratory
Publications - 45
Citations - 887
L. Grazulis is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Molecular beam epitaxy & Graphene. The author has an hindex of 12, co-authored 45 publications receiving 829 citations. Previous affiliations of L. Grazulis include Wright-Patterson Air Force Base.
Papers
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Journal ArticleDOI
Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices.
Ming Liu,Brandon M. Howe,L. Grazulis,Krishnamurthy Mahalingam,Tianxiang Nan,Nian X. Sun,Gail J. Brown +6 more
TL;DR: A voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures.
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Studies of interfacial layers between 4H-SiC (0 0 0 1) and graphene
TL;DR: The region between epitaxial graphene and the SiC substrate has been investigated in this paper, where the interfacial layers between pristine SiC and the graphene layers were studied by X-ray photoelectron spectroscopy.
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Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Jeongho Park,William C. Mitchel,L. Grazulis,H. E. Smith,Kurt G. Eyink,John J. Boeckl,David H. Tomich,Shanee D. Pacley,John E. Hoelscher +8 more
TL;DR: A novel growth method (carbon molecular beam epitaxy (CMBE) has been developed to produce high-quality and large-area epitaxial graphene that demonstrates significantly improved controllability of the graphene growth.
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Exploring optimum growth for high quality InAs/GaSb type-II superlattices
TL;DR: In this article, the effect of starting substrate surface morphology on buffer and SL layers was studied using a 51-A InAs/40-A GaSb SL structure, and the relationship of SL layer quality with photoresponse signal strength was made.
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Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene
Jeongho Park,William C. Mitchel,Said Elhamri,L. Grazulis,John Hoelscher,Krishnamurthy Mahalingam,Choongyu Hwang,Sung-Kwan Mo,Jonghoon Lee +8 more
TL;DR: A novel approach to producing epitaxial twisted graphene on SiC (0001) and the observation of its intrinsic bandgap behaviour are reported and thermal activation behaviour and nonlinear current-voltage characteristics conclude that an intrinsic band gap is opened in twisted graphene.