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John M. Youngsman

Researcher at Boise State University

Publications -  8
Citations -  172

John M. Youngsman is an academic researcher from Boise State University. The author has contributed to research in topics: Vibration & Resonator. The author has an hindex of 5, co-authored 7 publications receiving 159 citations. Previous affiliations of John M. Youngsman include Washington State University.

Papers
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Journal ArticleDOI

A resonant frequency tunable, extensional mode piezoelectric vibration harvesting mechanism

TL;DR: In this article, the extensional mode resonator (XMR) is formed by suspending a seismic mass with two piezoelectric sheets, and the mechanism is made frequency tunable by an adjustable link that symmetrically pre-tensions both sheets.
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A model for an extensional mode resonator used as a frequency-adjustable vibration energy harvester

TL;DR: In this article, an extensional mode resonator (XMR) device is described by a model that predicts the power that is harvested as a function of the frequency and amplitude of the external vibration, the elastic and piezoelectric materials properties, and the device geometry.
Patent

Energy converters and associated methods

TL;DR: In this paper, an energy converter includes a first structural member spaced apart from a second structure member, a first piezoelectric element and a second pyrolyte element individually coupled to the first structural members and the second structural members, and a deflection member tensionally suspended between the first and second piezolectric elements.
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Strategies for Controlling the Spatial Orientation of Single Molecules Tethered on DNA Origami Templates Physisorbed on Glass Substrates: Intercalation and Stretching

TL;DR: Two strategies for controlling the polar (θ) and in-plane azimuthal (ϕ) angular orientations of cyanine Cy5 single molecules tethered on rationally-designed DNA origami templates that are physically adsorbed (physisorbed) on glass substrates are presented.
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Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions

TL;DR: In this paper, polycrystalline 3C silicon carbide (SiC) was implanted at room temperature with 400 keV cesium ions to a dose of 1016 ions/cm2.