J
Jonghoo Park
Researcher at Kyungpook National University
Publications - 55
Citations - 842
Jonghoo Park is an academic researcher from Kyungpook National University. The author has contributed to research in topics: Mass spectrometry & Chemical vapor deposition. The author has an hindex of 11, co-authored 48 publications receiving 662 citations. Previous affiliations of Jonghoo Park include University of Wisconsin-Madison & Wisconsin Alumni Research Foundation.
Papers
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Journal ArticleDOI
Giant Piezoelectricity on Si for Hyperactive MEMS
Seung Hyub Baek,Jonghoo Park,D. M. Kim,Vladimir A. Aksyuk,Rasmi R. Das,Sang Don Bu,D. A. Felker,J. Lettieri,V. Vaithyanathan,S. S. N. Bharadwaja,Nazanin Bassiri-Gharb,Yong Chen,Haiping Sun,Chad M. Folkman,Ho Won Jang,Dustin J. Kreft,Stephen K. Streiffer,Ramamoorthy Ramesh,Xiaoqing Pan,Susan Trolier-McKinstry,Darrell G. Schlom,Darrell G. Schlom,Mark Rzchowski,Robert H. Blick,Chang-Beom Eom +24 more
TL;DR: In this paper, the authors synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of a template layer with superior piezoelectric coefficients (e31,f = −27 ± 3 coulombs per square meter).
Journal ArticleDOI
Wafer-scale production of highly uniform two-dimensional MoS2 by metal-organic chemical vapor deposition.
Tae-Wan Kim,Jihun Mun,Hyeji Park,Hyeji Park,DaeHwa Joung,DaeHwa Joung,Mangesh S. Diware,Chegal Won,Jonghoo Park,Soo-Hwan Jeong,Sang-Woo Kang,Sang-Woo Kang +11 more
TL;DR: This work presents the direct growth of a MoS2 monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO2/Si wafer, demonstrating the potential for reliable wafer-scale production of 2D MoS 2 for practical applications in next-generation electronic and optical devices.
Journal ArticleDOI
A mechanical nanomembrane detector for time-of-flight mass spectrometry.
Jonghoo Park,Hua Qin,Mark Scalf,Ryan T. Hilger,Michael S. Westphall,Lloyd M. Smith,Robert H. Blick +6 more
TL;DR: A new principle for ion detection in time-of-flight (TOF) mass spectrometry is described in which an impinging ion packet excites mechanical vibrations in a silicon nitride (Si(3)N(4)) nanomembrane.
Journal ArticleDOI
High-Mobility MoS2Directly Grown on Polymer Substrate with Kinetics-Controlled Metal-Organic Chemical Vapor Deposition
Jihun Mun,Hyeji Park,Jaeseo Park,DaeHwa Joung,DaeHwa Joung,Seoung-Ki Lee,Juyoung Leem,Jae Min Myoung,Jonghoo Park,Soo-Hwan Jeong,Won Chegal,SungWoo Nam,Sang Woo Kang,Sang Woo Kang +13 more
TL;DR: Batch growth of highmobility (μFE > 10 cm2V 1s−1) molybdenum disulfide (MoS2) films can be achieved by means of the chemical vapor deposition (CVD) method at high temperatures (>500 °C) on rigid s...
Journal ArticleDOI
Wafer-Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe2 Thin Films Grown by Metal–Organic Chemical Vapor Deposition
Tae-Wan Kim,Hyeji Park,Hyeji Park,DaeHwa Joung,DaeHwa Joung,Dong-Hwan Kim,Dong-Hwan Kim,Rochelle Lee,ChaeHo Shin,Mangesh S. Diware,Won Chegal,Soo-Hwan Jeong,Jae Cheol Shin,Jonghoo Park,Sang-Woo Kang +14 more