J
J. Lettieri
Researcher at Pennsylvania State University
Publications - 42
Citations - 2891
J. Lettieri is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 27, co-authored 42 publications receiving 2745 citations. Previous affiliations of J. Lettieri include Los Alamos National Laboratory.
Papers
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Journal ArticleDOI
In situ epitaxial MgB2 thin films for superconducting electronics.
X. H. Zeng,Alexej Pogrebnyakov,Armen Kotcharov,J. E. Jones,Xiaoxing Xi,E. M. Lysczek,Joan M. Redwing,S. Y. Xu,Qi Li,J. Lettieri,Darrell G. Schlom,Wei Tian,Xiaoqing Pan,Zi Kui Liu +13 more
TL;DR: Here it is shown that an in situ process in which MgB2 is formed directly on the substrate is desirable and can be achieved by hybrid physical–chemical vapour deposition, and this advance removes a major barrier for superconducting electronics using M gB2.
Journal ArticleDOI
Giant Piezoelectricity on Si for Hyperactive MEMS
Seung Hyub Baek,Jonghoo Park,D. M. Kim,Vladimir A. Aksyuk,Rasmi R. Das,Sang Don Bu,D. A. Felker,J. Lettieri,V. Vaithyanathan,S. S. N. Bharadwaja,Nazanin Bassiri-Gharb,Yong Chen,Haiping Sun,Chad M. Folkman,Ho Won Jang,Dustin J. Kreft,Stephen K. Streiffer,Ramamoorthy Ramesh,Xiaoqing Pan,Susan Trolier-McKinstry,Darrell G. Schlom,Darrell G. Schlom,Mark Rzchowski,Robert H. Blick,Chang-Beom Eom +24 more
TL;DR: In this paper, the authors synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of a template layer with superior piezoelectric coefficients (e31,f = −27 ± 3 coulombs per square meter).
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Oxide nano-engineering using MBE
TL;DR: In this paper, the use of reactive molecular beam epitaxy (MBE) to synthesize layered oxide heterostructures, including new compounds and metastable superlattices, involving monolayer-level integration of the dielectric and ferroelectric oxides, was described.
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Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon
TL;DR: The critical aspects of the epitaxial growth of alkaline-earth oxides on silicon are described in detail in this paper, with emphasis placed on the favorable interface stability, oxidation, structural, and strain considerations for each stage of the growth via molecular beam epitaxy.
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Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition
X. H. Zeng,X. H. Zeng,Alexej Pogrebnyakov,Alexej Pogrebnyakov,Meihong Zhu,Meihong Zhu,J. E. Jones,X. X. Xi,S. Y. Xu,E. Wertz,Qi Li,J. M. Redwing,J. Lettieri,V. Vaithyanathan,D. G. Schlom,Zi Kui Liu,O. Trithaveesak,Jürgen Schubert +17 more
TL;DR: In this article, the authors used two polytypes of silicon carbide single crystals, 4H-SiC and 6H -SiC, as the substrates for MgB2 thin films grown by hybrid physicalchemical vapor deposition (HPCVD).