J
Joon Young Yang
Researcher at LG Display
Publications - 20
Citations - 238
Joon Young Yang is an academic researcher from LG Display. The author has contributed to research in topics: Thin-film transistor & Electrode. The author has an hindex of 7, co-authored 20 publications receiving 174 citations. Previous affiliations of Joon Young Yang include Korea University.
Papers
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Journal ArticleDOI
An 18 megapixel 4.3″ 1443 ppi 120 Hz OLED display for wide field of view high acuity head mounted displays
Carlin Vieri,Grace Lee,Nikhil Balram,Sang Hoon Jung,Joon Young Yang,Soo Young Yoon,In Byeong Kang +6 more
TL;DR: Vieri et al. as discussed by the authors developed and fabricated the world's highest resolution (18 megapixel, 1443 ppi) OLED on glass display panel, which uses a white OLED with color filter structure for high density pixelization and an n-type LTPS backplane for faster response time than mobile phone displays.
Journal ArticleDOI
Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns.
Seung Gi Seo,Byung Chul Yeo,Sang Soo Han,Chang Mo Yoon,Joon Young Yang,Jonggeun Yoon,Choong-Keun Yoo,Kim Ho-Jin,Yong Baek Lee,Su Jeong Lee,Jae Min Myoung,Han-Bo-Ram Lee,Woo-Hee Kim,Il Kwon Oh,Hyungjun Kim +14 more
TL;DR: It is shown that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth, which is a breakthrough technique in the field of nanotechnology.
Patent
In-plane switching mode liquid crystal display device and method for fabricating the same
TL;DR: In this article, an in-plane switching mode LCD with a plurality of pixels arranged in a matrix includes a gate line formed on a lower substrate, a data line formed such that the data line intersects with the gate line to define a pixel region, a TFT (Thin Film Transistor) formed at the intersection of the gate and the data lines, a pixel electrode connected to the TFT, a common electrode to generate a horizontal electric field with the pixel electrode, and a common line supplying common voltage to the common electrode, wherein the common line comprises a first
Journal ArticleDOI
Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor
Yujin Lee,Chong Hwon Lee,Chong Hwon Lee,Taewook Nam,Sanghun Lee,Il Kwon Oh,Joon Young Yang,Dong Wook Choi,Choong-Keun Yoo,Kim Ho-Jin,Woo Hee Kim,Hyungjun Kim +11 more
TL;DR: In this article, the authors investigated the growth characteristics of sputtered La2O3 thin films as hydrogen barrier layers, focusing on variations in growth rate, refractive index, and film stress, which depend on various process parameters, such as radiofrequency (RF) power, O2 partial pressure, and substrate temperature during reactive magnetron sputtering.
Journal ArticleDOI
33.2: A New Process and Structure for Oxide Semiconductor LCDs
Joon Young Yang,Sul Lee,Seong Joon Cho,Myung Chul Jun,In Byeong Kang,Sang Deog Yeo,Jung Ho Park +6 more
TL;DR: In this article, a new 5 mask coplanar TFT structure was introduced, which reduces two mask steps compared to conventional 7 mask process and its transmittance is 12.5% improved by eliminating contact hole pattern.