K
Kim Ho-Jin
Researcher at LG Display
Publications - 14
Citations - 125
Kim Ho-Jin is an academic researcher from LG Display. The author has contributed to research in topics: Layer (electronics) & Substrate (printing). The author has an hindex of 3, co-authored 13 publications receiving 86 citations.
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Journal ArticleDOI
Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns.
Seung Gi Seo,Byung Chul Yeo,Sang Soo Han,Chang Mo Yoon,Joon Young Yang,Jonggeun Yoon,Choong-Keun Yoo,Kim Ho-Jin,Yong Baek Lee,Su Jeong Lee,Jae Min Myoung,Han-Bo-Ram Lee,Woo-Hee Kim,Il Kwon Oh,Hyungjun Kim +14 more
TL;DR: It is shown that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth, which is a breakthrough technique in the field of nanotechnology.
Journal ArticleDOI
65.1: Invited Paper: World 1st Large Size 18-inch Flexible OLED Display and the Key Technologies
Jonggeun Yoon,Hoiyong Kwon,Mireum Lee,Yu Younyeol,Nuri Cheong,Sungjoon Min,Jaekyung Choi,Hunbae Im,Kwonhyung Lee,Jung-sik Jo,Kim Ho-Jin,Hyunmin Choi,Yongbaek Lee,Choong-Keun Yoo,Kuk Seung-Hee,Mingu Cho,SeYeoul Kwon,Weonseo Park,Soo Young Yoon,In-Byeong Kang,Sang-Deog Yeo +20 more
TL;DR: In this article, the first 18-inch large size flexible OLED display has been fabricated, which can be bendable up to bending radius of 30 mm, and the key technologies to fabricate a large flexible OLED displays are discussed where the process flow and panel characteristics are elaborated.
Journal ArticleDOI
Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor
Yujin Lee,Chong Hwon Lee,Chong Hwon Lee,Taewook Nam,Sanghun Lee,Il Kwon Oh,Joon Young Yang,Dong Wook Choi,Choong-Keun Yoo,Kim Ho-Jin,Woo Hee Kim,Hyungjun Kim +11 more
TL;DR: In this article, the authors investigated the growth characteristics of sputtered La2O3 thin films as hydrogen barrier layers, focusing on variations in growth rate, refractive index, and film stress, which depend on various process parameters, such as radiofrequency (RF) power, O2 partial pressure, and substrate temperature during reactive magnetron sputtering.
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Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors.
Yujin Lee,Taewook Nam,Taewook Nam,Seung Gi Seo,Hwi Yoon,Il Kwon Oh,Il Kwon Oh,Chong Hwon Lee,Chong Hwon Lee,Hyukjoon Yoo,Hyun Jae Kim,Won-Jun Choi,Seongil Im,Joon Young Yang,Dong Wook Choi,Choong-Keun Yoo,Kim Ho-Jin,Hyungjun Kim +17 more
TL;DR: In this paper, the excellent hydrogen barrier properties of the atomic layer-deposition-grown Al2O3 (ALD Al 2O3) are first reported for improving the stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs).
Journal ArticleDOI
Use of LC-Orbitrap MS and FT-NIRS with multivariate analysis to determine geographic origin of Boston butt pork
TL;DR: In this article , LC-Orbitrap and FT-NIRS combined with multivariate analysis was used to distinguish between 53 Korean and foreign Boston butt samples; forty were used to establish the calibration model and 13 were used as an external validation set.