Joowon Choi

TL;DR: In this article, full-color micro light-emitting diodes (μ-LEDs) fabricated from semipolar wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated.

TL;DR: In this article, strong internal polarization fields in common c-plane LEDs, especially green, have been shown to be a promising candidate for visible light communication (VLC) in light-emitting diodes (LEDs).

TL;DR: In this article, a monolithic white semipolar (20-21) InGaN light-emitting diodes (LEDs) grown on high-crystal quality 4-inch GaN/sapphire template were presented.

TL;DR: A novel approach to eliminate stacking faults (SFs) and prepare large-area, SF-free semipolar gallium nitride (GaN) on sapphire substrates and opens up a new insight into the heteroepitaxial growth of nonpolar/semipolar GaN, which will create new opportunities in GaN optoelectronic and microelectronic research.

TL;DR: This work exhibits the potential to produce high-quality nitrogen-polar semipolar GaN templates and optoelectronic devices on large-area sapphire substrates with economical feasibility.