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Yujun Xie

Researcher at Yale University

Publications -  49
Citations -  2357

Yujun Xie is an academic researcher from Yale University. The author has contributed to research in topics: Thin film & Crystallization. The author has an hindex of 20, co-authored 49 publications receiving 1740 citations. Previous affiliations of Yujun Xie include Drexel University & IBM.

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Dual Tuning of Ni–Co–A (A = P, Se, O) Nanosheets by Anion Substitution and Holey Engineering for Efficient Hydrogen Evolution

TL;DR: A novel approach to tuning the anion-dependent electrocatalytic characteristics in MTM-based catalyst for HER, using holey Ni/Co-based phosphides/selenides/oxides (Ni-Co-A, A = P, Se, O) as the model materials, and electrochemical results reveal that P substitution could modulate the electron configuration, lower the hydrogen adsorption energy, and facilitate the desorption of hydrogen on the active sites in Ni-
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Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications.

TL;DR: The first black-phosphorus synaptic device is demonstrated, which offers intrinsic anisotropy in its synaptic characteristics directly resulting from its low crystalline symmetry, which represents an important step toward introducing intrinsic heterogeneity to artificial neuromorphic systems.
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Efficient electrical control of thin-film black phosphorus bandgap.

TL;DR: The unique thickness-dependent bandgap tuning properties in intrinsic black phosphorus, arising from the strong interlayer electronic-state coupling, are revealed and may pave the way for the investigation of electrically tunable topological insulators and semimetals.
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One-Step Synthesis of MoS2/WS2 Layered Heterostructures and Catalytic Activity of Defective Transition Metal Dichalcogenide Films

TL;DR: A one-step synthesis procedure for large-area vdW heterostructures between horizontal TMDCs MoS2 and WS2 is demonstrated, which indicates that, in addition to the catalytically active sulfur edge sites, defect sites may serve as catalyst sites.
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Emulating Bilingual Synaptic Response Using a Junction-Based Artificial Synaptic Device.

TL;DR: An artificial synaptic device concept, an ambipolar junction synaptic devices, which utilizes the tunable electronic properties of the heterojunction between two layered semiconductor materials black phosphorus and tin selenide to mimic the different states of the synaptic connection and realize the dynamic reconfigurability between excitatory and inhibitory postsynaptic effects.