Jörg Fricke

TL;DR: An overview of the latest development of diode laser technology and systems and their use within selected biomedical applications is provided in this paper, where the external cavity diode was used for Raman spectroscopy built on a 13 × 4 mm2 microbench.

TL;DR: A dual-wavelength Y-branch distributed Bragg reflector (DBR) diode laser at 785 nm is presented as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS).

TL;DR: Coherently aligned multi-atomic step arrays are naturally formed during molecular beam epitaxy (MBE) of GaAs/(AlGa)As heterostructures on GaAs (331) substrates as mentioned in this paper.

TL;DR: In this article, a dual-wavelength 785-nm DBR ridge waveguide (RW) mini-array was compared with respect to their usability as excitation light sources for shifted excitation Raman difference spectroscopy (SERDS).

TL;DR: In this article, a three-dimensional array of vertically stacked sidewall quantum wires is fabricated by molecular beam epitaxy on GaAs, and the cathodoluminescence spectra at low temperature are dominated by the emission from the quantum wires with narrow linewidth accompanied by a very weak emission from connecting thin quantum wells due to localization of excitons at random interface fluctuations.