Klaus H. Ploog

TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.

TL;DR: The unusual electrical and optical properties of three important types of semiconductor superlattices are reviewed in this article, where the electronic energy bands in these structures are split into quasi-two-dimensional subbands whose spacing and width can be tailored by appropriate choice of the design parameters of the structure.

TL;DR: In this article, a study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented, where Ga droplets with different diameters (340-90 nm) were deposited on the substrate prior to growth, to determine any effect on the Nanocolumn's size and distribution.

TL;DR: In this article, the advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed, and the advantages of using Raman spectroscopy for thin crystalline films of compound semiconductors.

TL;DR: In this paper, the spin polarization was achieved by a lateral current in a single nonmagnetic semiconductor heterojunction, which does not require an applied magnetic field and can be seen as the inverse of the circular photogalvanic effect.