Jörg Horzel

TL;DR: In this article, the authors describe a method of manufacturing a semiconductor device, comprising a semiconducting substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconductor substrate; step 2) diffusing the dopant atoms from said solidsbased source into said substrate by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate, and step 3) forming a metal contact pattern substantially in alignment with said

TL;DR: In this paper, an alternative passivating contact is formed in a single post-deposition annealing step called "firing", an essential step for current solar cell manufacturing, and it is shown that tuning the carbon content of boron-doped silicon-based thin films inhibits firing-induced layer delamination without preventing a partial crystallization.

TL;DR: In this article, a blister-free stack of Al2O3/SiOx/SiNx is developed, leading to an improved back reflection and a rear recombination current (J0,rear) of 92'±'6'fA/cm2.

TL;DR: In this article, two different approaches to form Cu plated contacts based on laser ablation of the SiNx:H antireflection coating (ARC) and subsequent plating steps are presented.

TL;DR: In this article, an electron selective passivating contact based on a tunneling SiO $_x$ capped with a phosphorous doped silicon carbide and prepared with a high-temperature thermal anneal is presented.