Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Triboelectrification is an effect that is known to each and every one probably since ancient Greek time, but it is usually taken as a negative effect and is avoided in many technologies. We have recently invented a triboelectric nanogenerator (TENG) that is used to convert mechanical energy into electricity by a conjunction of triboelectrification and electrostatic induction. As for this power generation unit, in the inner circuit, a potential is created by the triboelectric effect due to the charge transfer between two thin organic/inorganic films that exhibit opposite tribo-polarity; in the outer circuit, electrons are driven to flow between two electrodes attached on the back sides of the films in order to balance the potential. Since the most useful materials for TENG are organic, it is also named organic nanogenerator, which is the first using organic materials for harvesting mechanical energy. In this paper, we review the fundamentals of the TENG in the three basic operation modes: vertical contact-...

Triboelectric Nanogenerators as New Energy Technology for Self-Powered Systems and as Active Mechanical and Chemical Sensors

Supercapacitors have drawn considerable attention in recent years due to their high specific power, long cycle life, and ability to bridge the power/energy gap between conventional capacitors and batteries/fuel cells. Nanostructured electrode materials have demonstrated superior electrochemical properties in producing high-performance supercapacitors. In this review article, we describe the recent progress and advances in designing nanostructured supercapacitor electrode materials based on various dimensions ranging from zero to three. We highlight the effect of nanostructures on the properties of supercapacitors including specific capacitance, rate capability and cycle stability, which may serve as a guideline for the next generation of supercapacitor electrode design.

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Supercapacitor electrode materials: nanostructures from 0 to 3 dimensions

At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes. Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal.

Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs

Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption

Fiber‐Based Wearable Electronics: A Review of Materials, Fabrication, Devices, and Applications

We demonstrate a new flexible multilayered triboelectric nanogenerator (TENG) with extremely low cost, simple structure, small size (3.8 cm × 3.8 cm × 0.95 cm) and lightweight (7 g) by innovatively integrating five layers of units on a single flexible substrate. Owing to the unique structure and nanopore-based surface modification on the metal surface, the instantaneous short-circuit current (Isc) and the open-circuit voltage (Voc) could reach 0.66 mA and 215 V with an instantaneous maximum power density of 9.8 mW/cm2 and 10.24 mW/cm3. This is the first 3D integrated TENG for enhancing the output power. Triggered by press from normal walking, the TENG attached onto a shoe pad was able to instantaneously drive multiple commercial LED bulbs. With the flexible structure, the TENG can be further integrated into clothes or even attached onto human body without introducing sensible obstruction and discomfort to human motions. The novel design of TENG demonstrated here can be applied to potentially achieve self-...

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Integrated multilayered triboelectric nanogenerator for harvesting biomechanical energy from human motions.

Large‐Area Nanowire Arrays of Molybdenum and Molybdenum Oxides: Synthesis and Field Emission Properties

The brown planthopper, Nilaparvata lugens, is the most devastating rice insect pest to have given rise to an outbreak in recent years. RNA interference (RNAi) is a technological breakthrough that has been developed as a powerful tool for studying gene function and for the highly targeted control of insect pests. Here, we examined the effects of using a feeding-based RNAi technique to target the gene trehalose phosphate synthase (TPS) in N. lugens. The full-length cDNA of N. lugens TPS (NlTPS) is 3235 bp and has an open reading frame of 2424 bp, encoding a protein of 807 amino acids. NlTPS was expressed in the fat body, midgut and ovary. Quantitative real-time PCR (qRT-PCR) analysis revealed that NlTPS mRNA is expressed continuously with little change during the life of the insect. Efficient silencing of the TPS gene through double-stranded RNA (dsRNA) feeding led to rapid and significant reduction levels of TPS mRNA and enzymatic activity. Additionally, the development of N. lugens larvae that had been fed with the dsRNA was disturbed, resulting in lethality, and the cumulative survival rates dropped to 75.56, 64.44, 55.56 and 40.00% after continuous ingestion of 0.5 µg/µl dsRNA for 2, 4, 7 and 10 days, respectively. These values were significantly lower than those of the insects in the control group, suggesting that NlTPS dsRNA may be useful as a means of insect pest control.

Feeding-based RNA interference of a trehalose phosphate synthase gene in the brown planthopper, Nilaparvata lugens.

Strong light-matter coupling manifested by Rabi splitting has attracted tremendous attention due to its fundamental importance in cavity quantum-electrodynamics research and great potentials in quantum information applications. A prerequisite for practical applications of the strong coupling in future optoelectronic devices is an all-solid-state system exhibiting room-temperature Rabi splitting with active control. Here we realized such a system in heterostructure consisted of monolayer WS2 and an individual plasmonic gold nanorod. By taking advantages of the small mode volume of the nanorod and large transition dipole moment of the WS2 exciton, giant Rabi splitting energies of 91-133 meV can be achieved at ambient conditions, which only involve a small number of excitons. The strong light-matter coupling can be dynamically tuned either by electrostatic gating or temperature scanning. These findings can pave the way toward active nanophotonic devices operating at room temperature.

Room-Temperature Strong Light–Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals

Large-area, quasialigned nanotips of tungsten oxide have been grown by a two-step high-temperature, catalyst-free, physical evaporation deposition process. The tungsten oxide nanotips are single crystalline with growth direction of [010]. The tungsten oxide nanotips exhibit excellent field-emission properties with a low threshold field (for an emission current density of 10mA∕cm2) ∼4.37MV∕m and uniform emission from the entire arrays, as well as high time stability. These results make tungsten oxide nanotip arrays a competitive candidate for field-emission displays.

Jun Chen

Papers

Integrated multilayered triboelectric nanogenerator for harvesting biomechanical energy from human motions.

Large‐Area Nanowire Arrays of Molybdenum and Molybdenum Oxides: Synthesis and Field Emission Properties

Feeding-based RNA interference of a trehalose phosphate synthase gene in the brown planthopper, Nilaparvata lugens.

Room-Temperature Strong Light–Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals

Growth and field-emission property of tungsten oxide nanotip arrays