An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

Disclosed herein are liquid-crystal display (LCD) touch screens that integrate the touch sensing elements with the display circuitry. The integration may take a variety of forms. Touch sensing elements can be completely implemented within the LCD stackup but outside the not between the color filter plate and the array plate. Alternatively, some touch sensing elements can be between the color filter and array plates with other touch sensing elements not between the plates. In another alternative, all touch sensing elements can be between the color filter and array plates. The latter alternative can include both conventional and in-plane-switching (IPS) LCDs. In some forms, one or more display structures can also have a touch sensing function. Techniques for manufacturing and operating such displays, as well as various devices embodying such displays are also disclosed.

Touch screen liquid crystal display

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

PROBLEM TO BE SOLVED: To realize a semiconductor device of low manufacturing cost by the use of a glass substrate the distortion spot of which is at least a specified temperature, protecting on outer peripheral surface of the high heat resistant glass substrate by using an insulating silicon film, and forming a single-crystal silicon thin film on the high heat resistant glass substrate wrapped with the insulating silicon film. SOLUTION: A glass substrate (glass substrate the distortion spot of which is at least 750 deg.C or higher), having heat resistance capable of enduring a temperature of at least 750 deg.C, is used as a substrate. An amorphous silicon film 102 is formed to crystallized glass 101. When the film 2 is formed through a low- pressure heat CVD method, the amorphous silicon film 102 can be formed on the surface, the back and the side surface of the substrate 101, which is wrapped with the film 102. By thermally oxidizing the amorphous silicon film 102, a thermal oxide film 103 is formed. A single-crystal silicon thin film 107 is formed on the crystallized glass 101 whose outer peripheral part is protected by the thermal oxide film 103.

Semiconductor device and its forming method

To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion for holding data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter electrically connected to a source electrode or a drain electrode of the transistor is included. With the transistor, data held in the latch portion can be written into a gate capacitor of the inverter or a capacitor which is separately provided.

Nonvolatile latch circuit and logic circuit, and semiconductor device using the same

An EL display device capable of clear, multi-gradation color display, and an electronic device having the EL display device, are provided. Gradation display is performed in accordance with a time division driver method which controls by the amount of time an EL element formed in a pixel emits light, and the amount of time it does not emit light. Influence due to dispersion in the characteristics of electric current TFTs is prevented.

EL display device and electronic apparatus

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Method for fabricating a semiconductor device

An inexpensive light emitting device capable of displaying a bright image and an electric appliance using the light emitting device. In the light emitting device having a pixel portion and a driver circuit formed on one insulating member, all of semiconductor elements for the pixel portion and the driver circuit are formed by n-channel semiconductor elements, thereby enabling the manufacturing process to be simplified. Each of light-emitting elements provided in the pixel portion emits light in such a direction that most of the light travels away from the insulating member, so that substantially the whole of the pixel-forming segment electrode (corresponding to a cathode of an EL element) is formed as an effective light-emitting area. Therefore, a low-priced light-emitting device capable of displaying a bright image can be obtained.

Jun Koyama

Papers

Semiconductor device and its forming method

Nonvolatile latch circuit and logic circuit, and semiconductor device using the same

EL display device and electronic apparatus

Method for fabricating a semiconductor device

Light emitting device and electric appliance