An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

Disclosed herein are liquid-crystal display (LCD) touch screens that integrate the touch sensing elements with the display circuitry. The integration may take a variety of forms. Touch sensing elements can be completely implemented within the LCD stackup but outside the not between the color filter plate and the array plate. Alternatively, some touch sensing elements can be between the color filter and array plates with other touch sensing elements not between the plates. In another alternative, all touch sensing elements can be between the color filter and array plates. The latter alternative can include both conventional and in-plane-switching (IPS) LCDs. In some forms, one or more display structures can also have a touch sensing function. Techniques for manufacturing and operating such displays, as well as various devices embodying such displays are also disclosed.

Touch screen liquid crystal display

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

A 3bit/cell nonvolatile oxide semiconductor RAM (NOSRAM) test die comprising c-axis aligned crystal In-Ga-Zn-O TFTs has been fabricated. The write time of the test die is 100 ns. The test die collectively reads multilevel data within 900 ns with a 3bit A/D converter serving as reading circuit. The endurance of the 3bit/cell NOSRAM cell is more than 1012 cycles.

A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT

We designed, prototyped, and evaluated a liquid crystal panel integrated with a gate driver and a source driver using amorphous In–Ga–Zn-oxide thin film transistors (TFTs). Using bottom-gate bottom-contact (BGBC) thin film transistors, superior characteristics could be obtained. We obtained TFT characteristics with little variation even when the thickness of the gate insulator (GI) film was reduced owing to etching of source/drain (S/D) wiring, which is a typical process for the BGBC TFT. Moreover, a favorable ON-state current was obtained even when an In–Ga–Zn-oxide layer was formed over the S/D electrode. Since the upper portion of the In–Ga–Zn-oxide layer is not etched, the BGBC structure is predicted to be effective in thinning the In–Ga–Zn-oxide layer in the future. Upon evaluation, we found that the prototyped liquid crystal panel integrated with the gate and source drivers using the TFTs with improved characteristics had stable drive.

https://iopscience.iop.org/article/10.1143/JJAP.49.03CC02/pdf

Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In–Ga–Zn-Oxide Thin Film Transistors

We prototyped a 6.0-in. color sequential XGA LCD using an oxide semiconductor. A color sequential LCD has lower power consumption than a color filter LCD because light use efficiency is better. We utilize the low Ioff of the oxide semiconductor and make frame rate lower, which leads to the lower power consumption of drivers. The color sequential LCD can have a monochrome electronic paper function with a white backlight on.

28.2: Color Sequential LC Display Using High Reliable Oxide Semiconductors with Monochrome Electronic Paper Function

A light emitting device capable of preventing a luminance of individual light emitting elements from being fluctuated by applying electrical characteristics of TFTs for properly controlling current being fed to individual light emitting elements, and also capable of generating the constant luminance without adversely being affected by possible degradation of organic light emitting layers and variable temperature by way of preventing the luminance of light emitting elements from being lowered through degradation of organic light emitting layers. Instead of controlling the luminance of light emitting elements by means of a voltage applied to TFTs, by way of properly controlling current flowing into TFTs via a signal-line driving circuit, it is possible to hold on the current flowing into light emitting elements at a desired value without adversely being affected by electrical characteristics of TFTs. Further, a voltage biasing in an inverse direction is fed to light emitting elements per predetermined period of time. The above-described double means multiply such practical effects to more securely prevent the luminance from being lowered by possible degradation of organic light emitting layers, and make it possible to hold on such current flowing into light emitting elements at a desired value without being affected by electrical characteristics of TFTs.

Light emitting device, method of driving a light emitting device, and electronic equipment

The invention provides a downsized structure of a light emitting device, and a light emitting device which has enough reliability as a downsized light emitting device. The light emitting device comprising light emitting elements according to the invention includes a signal processing circuit disposed beside an FPC and the like that tended to be the dead space conventionally. Also, the light emitting device has a sealed structure using a barrier film in which moisture and oxygen can be blocked from outside not to come into TFTs, wirings, and the light emitting elements formed over a substrate.

Jun Koyama

Papers

A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT

Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In–Ga–Zn-Oxide Thin Film Transistors

28.2: Color Sequential LC Display Using High Reliable Oxide Semiconductors with Monochrome Electronic Paper Function

Light emitting device, method of driving a light emitting device, and electronic equipment

Light emitting device and manufacturing method of the same