An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

Disclosed herein are liquid-crystal display (LCD) touch screens that integrate the touch sensing elements with the display circuitry. The integration may take a variety of forms. Touch sensing elements can be completely implemented within the LCD stackup but outside the not between the color filter plate and the array plate. Alternatively, some touch sensing elements can be between the color filter and array plates with other touch sensing elements not between the plates. In another alternative, all touch sensing elements can be between the color filter and array plates. The latter alternative can include both conventional and in-plane-switching (IPS) LCDs. In some forms, one or more display structures can also have a touch sensing function. Techniques for manufacturing and operating such displays, as well as various devices embodying such displays are also disclosed.

Touch screen liquid crystal display

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

An object is to provide a photoelectric conversion device which can correct a difference between a measured light intensity and an actual light intensity, which occurs when output current decreases due to the fact that a strong light is received, and outputs the corrected current. The photoelectric conversion device includes a photoelectric conversion element; a photocurrent output circuit for providing a first current corresponding to the amount of incident light on the photoelectric conversion element; a photocurrent correcting circuit which includes a corrective photoelectric conversion element for providing a second current, the corrective photoelectric conversion element including a light shield film for blocking part of light; a photocurrent adder circuit which includes a circuit for providing a fourth current; and an amplifier circuit including a circuit which amplifies a current corresponding to the sum of the first current and the fourth current and outputs the amplified current.

Photoelectric conversion device and electronic device including the same

In an information processing system provided with a camera and a microphone, for transmitting and receiving information of a user to and from another information processing system through a transmission lime, image data of the user obtained by a camera is stored in a memory in advance. When one user communicates another user, image data of the one user is obtained by the camera and is synthesized with the image data stored in the memory in advance by image-processing. The clothes, hair, background, make-up etc. of the one user are made different to reality and the image data are transmitted to the another user in the communication.

Information processing system

In a circuit including at least one thin film transistor formed on an insulating substrate, a region 105 to which metal elements that promote crystallinity are added is disposed apart from a semiconductor island region 101 that forms the thin film transistor by a distance y, has a width w, and extends longitudinally over an end portion of the semiconductor island region 101 by a distance x. Also, in a TFT manufactured in a region which is not interposed between the nickel added regions, another nickel added region is disposed (resultantly, which is interposed between two nickel added regions). Further, all the intervals between the respective nickel added regions are preferably identified with each other. Thus, a thin film transistor circuit being capable of a high speed operation (in general, some tens of Mhz and more) is formed. In particular, correcting the difference of crystal growths, using a crystalline silicon film added with nickel, TFTs with uniform characteristics can be provided. Also, a crystal growth distance of a region where is not interposed between the nickel added regions can be sufficient.

Method of manufacturing a semiconductor device having TFTs with uniform characteristics

PROBLEM TO BE SOLVED: To make it possible to suppress the variations in the threshold voltage of thin-film transistors(TFTs) to a lower level by setting the width of the irradiation of a laser beam wider than the spacings between source followers and at an integral number of times of the spacings between the source followers. SOLUTION: The source followers are parallel connected by two pieces each in parallel to the progression direction of the laser beam. When the spacings between the source followers is defined as (d) and the irradiation width of the laser beam as L=3d, the source followers within the regions shown by diagonal lines are eventually irradiated with the laser beam twice but the source followers within the drop-out regions are eventually irradiated with the laser beam just once. Then, two kinds of the source followers varying in the threshold voltage form each other are eventually formed alternately or at every plural pieces in the progressing direction of the laser beam. The length in the overlap portions of the irradiation region of the laser beam is set at an integral number of times of the width (d) of the source followers, by which the source followers varying in the irradiation quantity of the laser beam may be regularly arrayed and manufactured with respect to the moving direction of the laser beam.

Manufacture of active matrix type display device

PROBLEM TO BE SOLVED: To provide a compensating circuit having p-channel type (p-ch) and n-channel type (n-ch) thin film transistors (TFT) where absolute values of threshold voltages of the p-ch TFT and the n-ch TFT are set almost equal. SOLUTION: The absolute value of the threshold voltage of the p-ch TFT is decreased by shortening the channel length or the width of a gate electrode of the p-ch TFT compared with those of the n-ch TFT, or preferably, by setting the former equal to 25 to 80% of the latter nearly. Thereby, the threshold voltage of the p-ch TFT is set equal to that of the n-ch TFT nearly. COPYRIGHT: (C)2004,JPO

Jun Koyama

Papers

Photoelectric conversion device and electronic device including the same

Information processing system

Method of manufacturing a semiconductor device having TFTs with uniform characteristics

Manufacture of active matrix type display device

Inverter circuit, ring oscillator, transfer gate, and analog switch element using thin film transistor